{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IMBG65R048M1HXTMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IMBG65R048M1HXTMA1","canonicalUrl":"https://icboms.com/infineon/IMBG65R048M1HXTMA1","factsUrl":"https://icboms.com/api/mcp/products/IMBG65R048M1HXTMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolSiC™ series, IMBG65R048M1HXTMA1, N-Channel SiCFET, 650 V Vdss, 45 A Id, 64 mOhm Rds(on) max @ 18 V, 33 nC Qg, PG-TO263-7-12, -55 to 175 °C.","salesMarkdown":"## 650 V SiC MOSFET — what the 64 mOhm Rds(on) means on your power stage The Infineon IMBG65R048M1HXTMA1 is a CoolSiC™ N-channel silicon carbide MOSFET in a PG-TO263-7-12 surface-mount package. The 64 mOhm Rds(on) at 18 V gate drive is the number that sets your conduction loss budget. At 20 A load current, I²R loss runs about 26 W — that's the heat the package has to sink through the TO263-7 tab. The 183 W power dissipation rating at the case gives you headroom if you keep the junction below 175°C. Gate charge is 33 nC at 18 V. That's low enough that a standard MOSFET driver with 2 A peak current can switch it at 100 kHz with about 3.3 mA average drive current. The input capacitance is 1118 pF at 400 V drain bias — the low Ciss at high Vds is a SiC advantage that reduces driver-side switching loss at light loads. ## Junction temperature ceiling — 175°C vs the usual 150°C The operating junction temperature range runs from -55°C to 175°C. That 175°C upper limit is 25°C higher than most silicon CoolMOS™ parts can manage. In a compact 650 V power stage — say a 2 kW totem-pole PFC or a 1.5 kW DC-DC converter — that extra thermal margin means you can shrink the heatsink or push more current before hitting the derating curve. The gate threshold voltage maximum is 5.7 V at 6 mA drain current. With a recommended drive voltage of 18 V for minimum Rds(on), the gate overdrive is about 12 V — well clear of the threshold window and safely inside the +23 V / -5 V absolute maximum gate rating. ## Active production and compliance — no LTB clock ticking ROHS3 compliance is confirmed.","metaTitle":"Infineon IMBG65R048M1HXTMA1 CoolSiC™ N-Ch SiCFET, 650 V","metaDescription":"Infineon CoolSiC™ SiCFET, 650 V drain, 45 A continuous, 64 mOhm Rds(on) at 18 V. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"CoolSiC™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolSiC™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"+23V, -5V","Technology":"SiCFET (Silicon Carbide)","Mounting Type":"Surface Mount","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5.7V @ 6mA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"64mOhm @ 20.1A, 18V","Power Dissipation (Max)":"183W (Tc)","Supplier Device Package":"PG-TO263-7-12","Gate Charge (Qg) (Max) @ Vgs":"33 nC @ 18 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"1118 pF @ 400 V","Drive Voltage (Max Rds On, Min Rds On)":"18V","Current - Continuous Drain (Id) @ 25°C":"45A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$11.64","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$11.64000","currency":"USD"},{"qty":10,"price":"$10.25200","currency":"USD"},{"qty":100,"price":"$8.86680","currency":"USD"},{"qty":500,"price":"$8.03556","currency":"USD"},{"qty":1000,"price":"$7.37055","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/2bef32318678b3957288aa3c3b54920c.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IMBG65R048M1HXTMA1 at 18V gate drive?","answer":"The maximum Rds(on) is 64 mOhm at 20.1 A drain current with an 18 V gate drive. That's the worst-case on-resistance across the operating temperature range; typical values at 25°C junction will be lower."},{"question":"Is IMBG65R048M1HXTMA1 RoHS and REACH compliant?","answer":"Yes, the part is ROHS3 compliant per the lifecycle record. REACH compliance is standard for Infineon's current-production CoolSiC™ portfolio, though the specific REACH registration is not listed in this entry."},{"question":"What is the typical application for the IMBG65R048M1HXTMA1?","answer":"This 650 V, 45 A SiC MOSFET is suited for high-efficiency power conversion where switching frequency and thermal margin matter — totem-pole PFC stages, bridgeless boost converters, 1.5–3 kW DC-DC converters, and on-board chargers for electric vehicles. The 175°C junction rating and low Rds(on) make it a fit for compact, forced-air or liquid-cooled power stages."},{"question":"Can IMBG65R048M1HXTMA1 replace an obsolete SiC MOSFET?","answer":"It can replace a 650 V class SiC MOSFET in the same TO263-7 footprint, provided the gate drive is compatible — the recommended drive is 18 V for minimum Rds(on), and the absolute maximum gate voltage is +23 V / -5 V. Check the pinout and gate threshold of the obsolete part against these limits before committing the BOM."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IMBG65R048M1HXTMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IMBG65R048M1HXTMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}