{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IMBG65R022M1HXTMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IMBG65R022M1HXTMA1","canonicalUrl":"https://icboms.com/infineon/IMBG65R022M1HXTMA1","factsUrl":"https://icboms.com/api/mcp/products/IMBG65R022M1HXTMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolSiC™ IMBG65R022M1HXTMA1 N-channel SiCFET, 650 V drain-source, 30 mOhm Rds(on) at 18 V gate drive, 64 A continuous drain current, 175°C junction temperature, PG-TO263-7-12 surface-mount package.","salesMarkdown":"## 650 V SiC FET for high-density power conversion The Infineon IMBG65R022M1HXTMA1 is a 650 V N-channel silicon carbide FET from the CoolSiC™ family, built on SiCFET technology for low switching and conduction losses in hard-switched topologies. ## Gate drive and switching behavior This SiC FET requires an 18 V gate drive for the specified 30 mOhm Rds(on) — standard 10 V or 12 V silicon MOSFET drivers will not fully enhance the channel, leaving extra on-resistance on the table. The gate threshold voltage is 5.7 V maximum at 12.3 mA drain current, so a 0 V to 18 V swing with a negative off-state bias (the -5 V Vgs max limit) is the typical drive profile for fast switching. Total gate charge is 67 nC at 18 V, and input capacitance measures 2288 pF at 400 V drain-source bias. These numbers are moderate for a 64 A, 650 V part — expect switching losses to be manageable with a properly sized gate driver in the 2 A to 5 A peak current range. ## Package and thermal management Housed in a PG-TO263-7-12 (D2PAK-7) surface-mount package, this part has a large exposed drain tab for heat sinking through the PCB copper plane. The 300 W power dissipation rating at case temperature assumes adequate thermal management — a multi-layer board with thermal vias under the tab and a heatsink on the opposite side is the typical approach for continuous high-current operation. The 7-lead variant (six source pins plus one gate) distributes the source current and improves thermal conduction compared to the standard 3-lead D2PAK. The footprint is not pin-compatible with a standard TO-263-3 — verify the land pattern before layout. ## Lifecycle and supply position Sourced through independent distribution, this part is quoted to order against your BOM quantity.","metaTitle":"Infineon IMBG65R022M1HXTMA1 CoolSiC™ N-Channel SiC FET","metaDescription":"Infineon CoolSiC™ IMBG65R022M1HXTMA1 N-channel SiCFET, 650 V Vdss, 30 mOhm Rds(on), 64 A Id, 175°C Tj, PG-TO263-7-12. Active lifecycle.","metaKeywords":null},"attributes":{"series":"CoolSiC™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolSiC™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"+23V, -5V","Technology":"SiCFET (Silicon Carbide)","Mounting Type":"Surface Mount","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5.7V @ 12.3mA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"30mOhm @ 41.1A, 18V","Power Dissipation (Max)":"300W (Tc)","Supplier Device Package":"PG-TO263-7-12","Gate Charge (Qg) (Max) @ Vgs":"67 nC @ 18 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"2288 pF @ 400 V","Drive Voltage (Max Rds On, Min Rds On)":"18V","Current - Continuous Drain (Id) @ 25°C":"64A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$19.97","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$19.97000","currency":"USD"},{"qty":10,"price":"$17.74700","currency":"USD"},{"qty":100,"price":"$15.52210","currency":"USD"},{"qty":500,"price":"$13.24552","currency":"USD"},{"qty":1000,"price":"$13.03855","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/8b3ff93b5e64241121fef5f44b7e744f.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What gate drive voltage is required for the IMBG65R022M1HXTMA1?","answer":"The IMBG65R022M1HXTMA1 requires an 18 V gate drive to achieve the specified 30 mOhm Rds(on). The gate threshold is 5.7 V maximum, and the gate-to-source voltage range is +23 V to -5 V, so a 0 V to 18 V swing with a negative off-state bias is the typical drive profile."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IMBG65R022M1HXTMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IMBG65R022M1HXTMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}