{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IMBF170R1K0M1XTMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IMBF170R1K0M1XTMA1","canonicalUrl":"https://icboms.com/infineon/IMBF170R1K0M1XTMA1","factsUrl":"https://icboms.com/api/mcp/products/IMBF170R1K0M1XTMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon Technologies CoolSiC™ series, N-Channel SiCFET, 1700 V drain-source, 5.2 A continuous drain, 1000 mOhm Rds(on), TO-263-7 (D²Pak) surface-mount package.","salesMarkdown":"## 1700 V SiC FET for high-voltage power conversion The IMBF170R1K0M1XTMA1: The 1700 V blocking voltage places it above standard 650 V and 900 V MOSFETs — this part targets applications where the DC bus exceeds 1000 V, such as three-phase 690 VAC drives, photovoltaic inverters with 1500 V DC input, and high-voltage auxiliary power supplies. The 1000 mOhm maximum on-resistance at 1 A and 15 V gate drive is higher than lower-voltage SiC parts, but the Rds(on) × Qg figure of merit is competitive for the voltage class — 1000 mOhm × 5 nC = 5000 mOhm·nC, enabling efficient switching at moderate frequencies. ## Gate drive and switching performance Gate charge is 5 nC typical at 12 V, and the recommended drive voltage range is 12 V to 15 V for achieving the rated Rds(on). The low Qg means the gate driver only needs to supply about 0.5 mA average current per MHz of switching frequency — a standard 1 A gate driver can easily drive multiple paralleled devices without excessive power dissipation. Input capacitance is 275 pF at 1000 V drain-source bias, which keeps the switching transition times short. The combination of low Ciss and low Qg makes this FET suitable for hard-switching topologies up to several hundred kHz, limited primarily by the thermal management of the 68 W maximum power dissipation. The gate-source voltage range of +20 V to -10 V provides margin for gate-drive overshoot during fast switching — a common concern with SiC devices where the Miller plateau can push the gate voltage above the recommended operating point. ## Package and thermal interface Housed in a PG-TO263-7-13 package (TO-263 with 7 leads and an exposed tab), the part is surface-mountable with the drain tab soldered to the PCB copper plane for heat sinking. The 68 W power dissipation at case temperature requires a thermal design that keeps the junction below 175°C — the exposed tab should connect to a copper area of at least 2-3 square inches on a 2 oz copper PCB for continuous operation at rated current. The wide temperature margin allows for derating in high-ambient installations without exceeding the junction limit.","metaTitle":"Infineon IMBF170R1K0M1XTMA1 CoolSiC™ N-Ch SiCFET, 1700 V","metaDescription":"IMBF170R1K0M1XTMA1 Infineon CoolSiC™ N-Channel SiCFET, 1700 V drain-source, 5.2 A continuous drain, 1000 mOhm Rds(on), TO-263-7 package, active production.","metaKeywords":null},"attributes":{"series":"CoolSiC™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Microcontrollers & Processors (MCU / MPU / DSP)"],"specifications":{"Series":"CoolSiC™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"+20V, -10V","Technology":"SiCFET (Silicon Carbide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-8, D²Pak (7 Leads + Tab), TO-263CA","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5.7V @ 1.1mA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"1000mOhm @ 1A, 15V","Power Dissipation (Max)":"68W (Tc)","Supplier Device Package":"PG-TO263-7-13","Gate Charge (Qg) (Max) @ Vgs":"5 nC @ 12 V","Drain to Source Voltage (Vdss)":"1700 V","Input Capacitance (Ciss) (Max) @ Vds":"275 pF @ 1000 V","Drive Voltage (Max Rds On, Min Rds On)":"12V, 15V","Current - Continuous Drain (Id) @ 25°C":"5.2A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$6.17","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$6.17000","currency":"USD"},{"qty":10,"price":"$5.17700","currency":"USD"},{"qty":100,"price":"$4.18790","currency":"USD"},{"qty":500,"price":"$3.72262","currency":"USD"},{"qty":1000,"price":"$3.18749","currency":"USD"},{"qty":2000,"price":"$3.00136","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/8359f5d1dc66a4a99d03ee10a73cd333.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What compliance documentation does Infineon provide for IMBF170R1K0M1XTMA1?","answer":"The part is ROHS3 compliant. Infineon provides the standard RoHS declaration and material composition data. No UL or IEC certification is listed in the available documentation."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IMBF170R1K0M1XTMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IMBF170R1K0M1XTMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T19:45:10.375Z","lastPublished":"2026-07-22T19:45:10.375Z","indexable":true}}