{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IHW20N135R3","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IHW20N135R3","canonicalUrl":"https://icboms.com/infineon/IHW20N135R3","factsUrl":"https://icboms.com/api/mcp/products/IHW20N135R3","rawCanonicalId":null},"summary":{"shortDescription":"Infineon IHW20N135R3 reverse conducting IGBT, Trench Field Stop, 1350 V, 40 A, 1.8 V Vce(sat) @ 15 V / 20 A, 195 nC gate charge, 310 W, TO-247-3, -40 to 175 °C.","salesMarkdown":"## Reverse-conducting IGBT with monolithic diode The Infineon IHW20N135R3 is a reverse-conducting IGBT (RC-IGBT) that integrates the anti-parallel freewheeling diode monolithically into the Trench Field Stop die. This eliminates the external diode and its package parasitics, reducing loop inductance and board area in resonant converters, induction heating, and soft-switching power stages. The TO-247-3 package (PG-TO247-3-41) is a through-hole package standard for high-power through-hole designs. Gate charge is 195 nC. Turn-off delay is 335 ns. ## Switching energy and test conditions Turn-off energy is specified at 1.3 mJ under test conditions of 600 V bus, 20 A collector current, 15 Ω gate resistor, and 15 V gate drive. That 1.3 mJ is the dominant loss term in hard-switched topologies; designers targeting switching frequencies above 20 kHz should derate the output current or plan for a larger heatsink to keep junction temperature within the 175 °C limit. ## Active lifecycle, ROHS3, and sourcing posture It is ROHS3 compliant.","metaTitle":"Infineon IHW20N135R3 Reverse Conducting IGBT, 1350 V, 40 A","metaDescription":"Infineon IHW20N135R3 trench field-stop RC-IGBT: 1350 V, 40 A, 1.8 V Vce(sat), 195 nC gate charge, 175 °C Tj. TO-247-3 package. Active, ROHS3.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Package":"Bulk","IGBT Type":"Trench Field Stop","Input Type":"Standard","Gate Charge":"195 nC","Power - Max":"310 W","Mounting Type":"Through Hole","Package / Case":"TO-247-3","Test Condition":"600V, 20A, 15Ohm, 15V","lifecycle_stage":"eol_hot","Switching Energy":"-, 1.3mJ (off)","Td (on/off) @ 25°C":"-/335ns","Operating Temperature":"-40°C ~ 175°C (TJ)","Supplier Device Package":"PG-TO247-3-41","Vce(on) (Max) @ Vge, Ic":"1.8V @ 15V, 20A","Current - Collector (Ic) (Max)":"40 A","Current - Collector Pulsed (Icm)":"60 A","Voltage - Collector Emitter Breakdown (Max)":"1350 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.11","priceTiers":[{"qty":143,"price":"$2.11000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/f1183c100c18a151a3680b10d3c3f9fd.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IHW20N135R3/alternatives.json"},"ai":{"faq":[{"question":"What is a reverse conducting IGBT?","answer":"A reverse-conducting IGBT (RC-IGBT) integrates the anti-parallel freewheeling diode into the same silicon die as the IGBT. This eliminates the external diode, reduces package count, and lowers loop inductance — particularly beneficial in resonant and soft-switching topologies where the diode conducts during the resonant cycle."},{"question":"What are the specifications of IHW20N135R3?","answer":"Key ratings: 1350 V collector-emitter breakdown, 40 A continuous collector current, 60 A pulsed, 1.8 V Vce(sat) at 15 V / 20 A, 195 nC gate charge, 1.3 mJ turn-off energy at 600 V / 20 A, 310 W max power dissipation, -40 to 175 °C junction temperature, TO-247-3 package."},{"question":"How does IHW20N135R3 compare to a standard IGBT with external diode?","answer":"The IHW20N135R3 monolithically integrates the freewheeling diode, saving the cost and board area of a separate diode package and eliminating the interconnect inductance between the IGBT and diode. This reduces switching loop inductance and can improve efficiency in resonant topologies. The trade-off is that the monolithic diode's characteristics are fixed — you cannot independently select a faster or softer-recovery diode for a given application."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IHW20N135R3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IHW20N135R3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T10:39:33.080Z","lastPublished":"2026-07-16T10:39:33.080Z","indexable":true}}