{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IGLD60R190D1AUMA3","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IGLD60R190D1AUMA3","canonicalUrl":"https://icboms.com/infineon/IGLD60R190D1AUMA3","factsUrl":"https://icboms.com/api/mcp/products/IGLD60R190D1AUMA3","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolGaN™ series, IGLD60R190D1AUMA3, N-Channel GaNFET, 600 V Vdss, 10 A Id @ 25°C, 157 pF Ciss @ 400 V, PG-LSON-8-1 package, -55°C to 150°C junction temperature.","salesMarkdown":"## 600 V CoolGaN FET — what the ratings mean for the switching loop The 157 pF input capacitance at 400 V drain bias is the headline number that separates GaN from silicon. The PG-LSON-8-1 package (8-lead LDFN with exposed pad) is a surface-mount footprint. ## Gate drive — the GaN constraint that catches Si designers Because GaN FETs have no intrinsic body diode, the reverse conduction characteristic is different from a MOSFET. The device conducts in the third quadrant with a Vsd that depends on gate bias. This matters for half-bridge and synchronous-rectifier designs where dead-time conduction loss must be calculated from the GaN's own curve, not a diode forward drop. ## Temperature range and deployment environment The junction temperature range spans -55 °C to 150 °C. That is the full military-temperature-grade span, which in practice means this part is at home in outdoor telecom rectifiers, industrial motor drives with high ambient temperatures, and on-board chargers for electric vehicles where the thermal cycling is severe. The -55 °C low end covers cold-soak startup in arctic environments without parameter drift concerns. ## Lifecycle and sourcing Infineon continues to manufacture the CoolGaN series in this package variant. The part is ROHS3 compliant. For a BOM line that needs a high-voltage GaN FET, this part can be qualified into production without an obsolescence clock.","metaTitle":"Infineon IGLD60R190D1AUMA3 CoolGaN N-Channel GaNFET, 600 V","metaDescription":"Infineon CoolGaN IGLD60R190D1AUMA3 N-channel 600 V 10 A GaNFET in PG-LSON-8-1. Active production, -55 to 150 °C junction range. Available to order.","metaKeywords":null},"attributes":{"series":"CoolGaN™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Analog & Data Acquisition"],"specifications":{"Series":"CoolGaN™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"-10V","Technology":"GaNFET (Gallium Nitride)","Mounting Type":"Surface Mount","Package / Case":"8-LDFN Exposed Pad","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"1.6V @ 960µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Power Dissipation (Max)":"62.5W (Tc)","Supplier Device Package":"PG-LSON-8-1","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"157 pF @ 400 V","Current - Continuous Drain (Id) @ 25°C":"10A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.98","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$5.98000","currency":"USD"},{"qty":10,"price":"$5.01900","currency":"USD"},{"qty":100,"price":"$4.06070","currency":"USD"},{"qty":500,"price":"$3.60950","currency":"USD"},{"qty":1000,"price":"$3.09063","currency":"USD"},{"qty":3000,"price":"$2.91016","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/f2dec7e6bef0cf5d89d0ba48bb7710a7.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the maximum Vgs for IGLD60R190D1AUMA3?","answer":"Maximum gate-source voltage is -10 V. This is a tighter window than silicon MOSFETs; a standard 12 V gate drive will exceed the rating. The gate driver must be selected for a regulated 0 to 6 V or 0 to 7 V swing per the CoolGaN datasheet recommendation."},{"question":"Does IGLD60R190D1AUMA3 require a gate driver?","answer":"Yes. As a GaN FET, it requires a dedicated gate driver that can provide a regulated gate voltage within the -10 V maximum and at the recommended drive level for the on-resistance. Standard MOSFET gate drivers with 12 V output are not compatible."},{"question":"What is the functional difference between IGLD60R190D1AUMA3 and a silicon MOSFET like IPD50R950CEAUMA1?","answer":"The IGLD60R190D1AUMA3 is a GaN FET with 157 pF input capacitance at 400 V, versus the IPD50R950CEAUMA1 CoolMOS with 200 pF typical and a 500 V drain rating. The GaN part carries 10 A continuous vs 4.3 A, and its gate drive is limited to -10 V versus ±20 V. The GaN device has no intrinsic body diode, so third-quadrant conduction behaves differently. These are different device classes for different switching-frequency targets, not direct substitutes."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IGLD60R190D1AUMA3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IGLD60R190D1AUMA3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}