{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IDW40G65C5BXKSA2","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IDW40G65C5BXKSA2","canonicalUrl":"https://icboms.com/infineon/IDW40G65C5BXKSA2","factsUrl":"https://icboms.com/api/mcp/products/IDW40G65C5BXKSA2","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolSiC™+ IDW40G65C5BXKSA2, Silicon Carbide Schottky Diode, 650 V, 20 A, No Recovery Time > 500 mA (Io), TO-247-3, Through Hole, -55°C to 175°C.","salesMarkdown":"## 650 V / 20 A SiC Schottky — zero-recovery switching The Infineon IDW40G65C5BXKSA2 is a silicon carbide Schottky diode from the CoolSiC+ series, rated 650 V reverse voltage and 20 A average forward current in a through-hole TO-247-3 package. Its headline spec — zero reverse recovery time (trr = 0 ns) — means there is no stored charge to sweep out during turn-off, so switching losses are effectively eliminated in the diode itself. This is the main reason designers pick SiC over ultrafast silicon in hard-switched PFC, LLC resonant converters, and high-frequency boost stages. ## Forward drop and thermal headroom Maximum forward voltage is 1.7 V at 20 A. Reverse leakage at 650 V is 210 µA. ## Package and mounting — TO-247-3 The PG-TO247-3 package uses the standard TO-247 footprint with three through-hole leads. The large copper tab on the back carries the cathode and is the primary thermal path — a pad area on the PCB or a clip-on heatsink with thermal interface material sets the junction-to-case resistance. No exposed paddle to solder; the tab is electrically live (cathode potential), so the heatsink must be isolated or the mounting hole kept clear. ## Lifecycle and supply posture It is RoHS3 compliant (lead-free).","metaTitle":"Infineon IDW40G65C5BXKSA2 SiC Schottky Diode, 650 V 20 A","metaDescription":"Infineon CoolSiC+ silicon carbide Schottky diode, 650 V, 20 A, zero reverse recovery, TO-247-3.","metaKeywords":null},"attributes":{"series":"CoolSiC™+","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Speed":"No Recovery Time > 500mA (Io)","Series":"CoolSiC™+","Package":"Tube","Diode Type":"Silicon Carbide Schottky","Mounting Type":"Through Hole","Package / Case":"TO-247-3","lifecycle_stage":"eol_hot","Capacitance @ Vr, F":"590pF @ 1V, 1MHz","Supplier Device Package":"PG-TO247-3","Reverse Recovery Time (trr)":"0 ns","Current - Reverse Leakage @ Vr":"210 µA @ 650 V","Voltage - DC Reverse (Vr) (Max)":"650 V","Current - Average Rectified (Io)":"20A","Operating Temperature - Junction":"-55°C ~ 175°C","Voltage - Forward (Vf) (Max) @ If":"1.7 V @ 20 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$19.93","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$19.93000","currency":"USD"},{"qty":10,"price":"$18.31500","currency":"USD"},{"qty":100,"price":"$15.46780","currency":"USD"},{"qty":500,"price":"$14.44048","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/18c7db487972557f1ed652983ef72e2e.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is IDW40G65C5BXKSA2 compatible with high-frequency power conversion?","answer":"Yes — the zero reverse recovery time (trr = 0 ns) eliminates the stored-charge switching loss that limits ultrafast silicon diodes. This makes the part well suited for hard-switched topologies like PFC and LLC converters operating above 100 kHz."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IDW40G65C5BXKSA2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IDW40G65C5BXKSA2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}