{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IDW30G65C5XKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IDW30G65C5XKSA1","canonicalUrl":"https://icboms.com/infineon/IDW30G65C5XKSA1","factsUrl":"https://icboms.com/api/mcp/products/IDW30G65C5XKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolSiC™+ IDW30G65C5XKSA1, Silicon Carbide Schottky Diode, 650 V DC reverse, 30 A average rectified, zero reverse recovery time, TO-247-3 through-hole, -55°C to 175°C junction.","salesMarkdown":"## What this SiC Schottky brings to the power stage Its defining characteristic is zero reverse recovery time — listed as 0 ns trr — which eliminates the switching losses that plague silicon ultrafast diodes in hard-switched topologies. The TO-247-3 through-hole package (PG-TO247-3) handles the thermal load of a 30 A average forward current, and the 175°C maximum junction temperature gives headroom in a cramped enclosure. No official second source or pin-compatible alternate is recorded in the Infineon CoolSiC™+ family, though other 650 V, 30 A SiC Schottkies in TO-247 exist from Wolfspeed and ST — each with its own gate-drive and thermal characteristics that require layout-level validation before substitution.","metaTitle":"Infineon IDW30G65C5XKSA1 SiC Schottky Diode","metaDescription":"Infineon CoolSiC™+ silicon carbide Schottky diode, 650V 30A, zero reverse recovery time (trr=0 ns), TO-247-3. Active, RoHS3.","metaKeywords":null},"attributes":{"series":"CoolSiC™+","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Speed":"No Recovery Time > 500mA (Io)","Series":"CoolSiC™+","Package":"Tube","Diode Type":"Silicon Carbide Schottky","Mounting Type":"Through Hole","Package / Case":"TO-247-3","lifecycle_stage":"eol_hot","Capacitance @ Vr, F":"860pF @ 1V, 1MHz","Supplier Device Package":"PG-TO247-3","Reverse Recovery Time (trr)":"0 ns","Current - Reverse Leakage @ Vr":"220 µA @ 650 V","Voltage - DC Reverse (Vr) (Max)":"650 V","Current - Average Rectified (Io)":"30A","Operating Temperature - Junction":"-55°C ~ 175°C","Voltage - Forward (Vf) (Max) @ If":"1.7 V @ 30 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$13.44","priceTiers":[{"qty":1,"price":"$13.44000","currency":"USD"},{"qty":10,"price":"$12.34900","currency":"USD"},{"qty":100,"price":"$10.42920","currency":"USD"},{"qty":500,"price":"$9.73648","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/e1499ab4da494132a591f31e29ea8037.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IDW30G65C5XKSA1/alternatives.json"},"ai":{"faq":[{"question":"What is the reverse recovery time of IDW30G65C5XKSA1?","answer":"The reverse recovery time is 0 ns — it is a silicon carbide Schottky diode with no stored charge, so there is no recovery tail."},{"question":"Is IDW30G65C5XKSA1 RoHS compliant?","answer":"Yes, it is ROHS3 compliant."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IDW30G65C5XKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IDW30G65C5XKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T10:39:33.080Z","lastPublished":"2026-07-16T10:39:33.080Z","indexable":true}}