{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IDW12G65C5XKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IDW12G65C5XKSA1","canonicalUrl":"https://icboms.com/infineon/IDW12G65C5XKSA1","factsUrl":"https://icboms.com/api/mcp/products/IDW12G65C5XKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolSiC™+ Silicon Carbide Schottky Diode, IDW12G65C5XKSA1, 650 V, 12 A, No Recovery Time > 500 mA, TO-247-3, Through Hole, -55°C to 175°C Junction.","salesMarkdown":"## 650 V, 12 A SiC Schottky — zero-recovery switching The Infineon IDW12G65C5XKSA1 is a 650 V, 12 A Silicon Carbide Schottky diode from the CoolSiC™+ generation, packaged in a through-hole TO-247-3 (PG-TO247-3). Its zero reverse recovery time (trr = 0 ns) eliminates the turn-off loss spike that limits ultrafast silicon diodes in hard-switched topologies — the No Recovery Time rating holds above 500 mA forward current, covering the full operating range. ## What zero trr means for the BOM The SiC Schottky structure has no minority carriers, so trr is 0 ns — no recovery charge, no temperature-dependent tail current. It is fully ROHS3 compliant. The CoolSiC™+ series is Infineon's mainstream SiC Schottky portfolio, so second-sourcing is straightforward from other vendors' 650 V, 12 A SiC diodes in TO-247-2 or TO-247-3, though pinout and package footprint should be verified per the datasheet.","metaTitle":"Infineon IDW12G65C5XKSA1 CoolSiC+ SiC Schottky Diode","metaDescription":"Infineon IDW12G65C5XKSA1 Silicon Carbide Schottky diode, 650V, 12A, TO-247-3, zero reverse recovery, -55 to 175°C junction. Available to order.","metaKeywords":null},"attributes":{"series":"CoolSiC™+","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Speed":"No Recovery Time > 500mA (Io)","Series":"CoolSiC™+","Package":"Tube","Diode Type":"Silicon Carbide Schottky","Mounting Type":"Through Hole","Package / Case":"TO-247-3","lifecycle_stage":"eol_hot","Capacitance @ Vr, F":"360pF @ 1V, 1MHz","Supplier Device Package":"PG-TO247-3","Reverse Recovery Time (trr)":"0 ns","Current - Reverse Leakage @ Vr":"190 µA @ 650 V","Voltage - DC Reverse (Vr) (Max)":"650 V","Current - Average Rectified (Io)":"12A","Operating Temperature - Junction":"-55°C ~ 175°C","Voltage - Forward (Vf) (Max) @ If":"1.7 V @ 12 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$6.85","priceTiers":[{"qty":1,"price":"$6.85000","currency":"USD"},{"qty":10,"price":"$6.15400","currency":"USD"},{"qty":100,"price":"$5.04180","currency":"USD"},{"qty":500,"price":"$4.29200","currency":"USD"},{"qty":1000,"price":"$3.93452","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/4252fa943838c5ce402c7295afa6d10f.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IDW12G65C5XKSA1/alternatives.json"},"ai":{"faq":[{"question":"Is IDW12G65C5XKSA1 RoHS compliant?","answer":"Yes, it is ROHS3 compliant."},{"question":"What does 'No Recovery Time > 500 mA' mean?","answer":"It means the diode exhibits zero reverse recovery time (trr = 0 ns) when the forward current exceeds 500 mA. Below that threshold the recovery characteristic is still negligible, but the datasheet guarantees zero recovery above 500 mA — covering the normal operating current of this 12 A part."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IDW12G65C5XKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IDW12G65C5XKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T10:39:33.080Z","lastPublished":"2026-07-16T10:39:33.080Z","indexable":true}}