{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IDM08G120C5XTMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IDM08G120C5XTMA1","canonicalUrl":"https://icboms.com/infineon/IDM08G120C5XTMA1","factsUrl":"https://icboms.com/api/mcp/products/IDM08G120C5XTMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolSiC™+ series, IDM08G120C5XTMA1, SiC Schottky diode, 1200 V DC reverse, 8 A average rectified, zero reverse recovery time, -55 to 175 °C junction, surface-mount PG-TO252-2 package.","salesMarkdown":"## What this diode brings to a power stage The Infineon IDM08G120C5XTMA1 is a 1200 V, 8 A silicon carbide Schottky diode from the CoolSiC™+ family. Its zero reverse recovery time eliminates the turn-off losses that plague silicon ultrafast diodes in hard-switched converters, so the switching node runs cooler and the snubber network can be smaller. The 175 °C maximum junction temperature gives headroom for high-ambient environments like on-board chargers, PV inverters, and industrial power supplies where the heatsink is tight. The single tab is the cathode — the PCB layout must handle the full 8 A through the tab solder joint. The tape-and-reel option suits volume production; the cut-tape variant works for prototypes. The 2-lead + tab arrangement means the anode and cathode are on opposite sides of the package; verify the pad layout matches the supplier drawing before committing the board.","metaTitle":"Infineon IDM08G120C5XTMA1 CoolSiC™+ SiC Schottky Diode","metaDescription":"Infineon IDM08G120C5XTMA1 CoolSiC™+ SiC Schottky diode, 1200 V, 8 A, zero reverse recovery time, 175 °C Tj, DPAK package. Active, ROHS3.","metaKeywords":null},"attributes":{"series":"CoolSiC™+","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Speed":"No Recovery Time > 500mA (Io)","Series":"CoolSiC™+","Package":"Tape & Reel (TR); Cut Tape (CT)","Technology":"SiC (Silicon Carbide) Schottky","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPAK (2 Leads + Tab), SC-63","lifecycle_stage":"eol_hot","Capacitance @ Vr, F":"365pF @ 1V, 1MHz","Supplier Device Package":"PG-TO252-2","Reverse Recovery Time (trr)":"0 ns","Current - Reverse Leakage @ Vr":"40 µA @ 1200 V","Voltage - DC Reverse (Vr) (Max)":"1200 V","Current - Average Rectified (Io)":"8A","Operating Temperature - Junction":"-55°C ~ 175°C","Voltage - Forward (Vf) (Max) @ If":"1.95 V @ 8 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.02","priceTiers":[{"qty":1,"price":"$5.02000","currency":"USD"},{"qty":10,"price":"$4.21800","currency":"USD"},{"qty":100,"price":"$3.41230","currency":"USD"},{"qty":500,"price":"$3.03314","currency":"USD"},{"qty":1000,"price":"$2.59712","currency":"USD"},{"qty":2500,"price":"$2.43225","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/a91d7d6f313c549c955643aa4176cc41.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IDM08G120C5XTMA1/alternatives.json"},"ai":{"faq":[{"question":"What does zero reverse recovery time mean for my design?","answer":"Zero trr means the diode switches off instantly with no stored charge to sweep out. This eliminates the reverse-recovery current spike that causes switching losses and EMI in silicon diodes, allowing higher switching frequencies and smaller magnetics."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IDM08G120C5XTMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IDM08G120C5XTMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T10:39:33.080Z","lastPublished":"2026-07-16T10:39:33.080Z","indexable":true}}