{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IDL12G65C5XUMA2","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IDL12G65C5XUMA2","canonicalUrl":"https://icboms.com/infineon/IDL12G65C5XUMA2","factsUrl":"https://icboms.com/api/mcp/products/IDL12G65C5XUMA2","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolSiC™+ IDL12G65C5XUMA2, SiC (Silicon Carbide) Schottky Diode, 650 V DC Reverse, 12 A Average Rectified, Zero Reverse Recovery Time (trr 0 ns), Surface Mount, PG-VSON-4 Package, -55°C to 150°C Junction.","salesMarkdown":"## Zero-recovery SiC Schottky for hard-switched power stages Its defining characteristic is zero reverse recovery time — the datasheet lists trr at 0 ns — which eliminates the switching losses and EMI that a standard silicon ultrafast diode generates during turn-off. For a PFC boost stage, LLC resonant tank, or photovoltaic inverter, that means the diode no longer dictates the switching frequency ceiling or the snubber bill of materials. The part is surface-mount in a 4-PowerTSFN package, also designated PG-VSON-4. ## What the zero-recovery spec means for the switching node Reverse leakage at the 650 V blocking voltage is 190 µA — a figure to include in standby-loss and thermal calculations, particularly if the diode will spend significant time at high junction temperature. Capacitance at 1 V bias is 360 pF. This is the output capacitance the switching node sees; it contributes to the resonant tank in LLC converters and to the turn-on loss of the companion switch in hard-switched topologies. The PG-VSON-4 is a small, no-lead package with a large bottom-side drain pad for thermal conduction. Standard surface-mount reflow applies. Check the moisture-sensitivity level on the reel label before the line runs — a high MSL rating means a bake cycle before reflow if the floor humidity exposure window has been exceeded. The pad footprint is compact, so verify solder-paste stencil aperture for adequate solder joint volume on the thermal pad. ## Lifecycle and compliance — no procurement surprises","metaTitle":"Infineon IDL12G65C5XUMA2 CoolSiC™+ SiC Schottky Diode","metaDescription":"Infineon IDL12G65C5XUMA2 CoolSiC™+ SiC Schottky diode, 650V 12A, zero reverse recovery time (trr=0 ns). Active, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"CoolSiC™+","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Speed":"No Recovery Time > 500mA (Io)","Series":"CoolSiC™+","Package":"Tape & Reel (TR); Cut Tape (CT)","Technology":"SiC (Silicon Carbide) Schottky","Mounting Type":"Surface Mount","Package / Case":"4-PowerTSFN","lifecycle_stage":"eol_hot","Capacitance @ Vr, F":"360pF @ 1V, 1MHz","Supplier Device Package":"PG-VSON-4","Reverse Recovery Time (trr)":"0 ns","Current - Reverse Leakage @ Vr":"190 µA @ 650 V","Voltage - DC Reverse (Vr) (Max)":"650 V","Current - Average Rectified (Io)":"12A","Operating Temperature - Junction":"-55°C ~ 150°C","Voltage - Forward (Vf) (Max) @ If":"1.7 V @ 12 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.44","priceTiers":[{"qty":1,"price":"$5.44000","currency":"USD"},{"qty":10,"price":"$4.56900","currency":"USD"},{"qty":100,"price":"$3.69620","currency":"USD"},{"qty":500,"price":"$3.28548","currency":"USD"},{"qty":1000,"price":"$2.81320","currency":"USD"},{"qty":3000,"price":"$2.64893","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/d3ff8c19af9924771066bbda635e9956.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IDL12G65C5XUMA2/alternatives.json"},"ai":{"faq":[{"question":"Is IDL12G65C5XUMA2 a direct replacement for a standard 650V 12A silicon diode?","answer":"Yes, in terms of voltage and current ratings it drops into the same 650 V, 12 A slot. The key difference is that the SiC Schottky has zero reverse recovery time, while a standard silicon ultrafast diode has a non-zero trr. The PCB footprint must match the PG-VSON-4 package, which differs from a typical TO-220 or D2PAK silicon diode footprint. Electrically it is a direct functional replacement that eliminates recovery losses, but the board layout must accommodate the surface-mount package."},{"question":"Does IDL12G65C5XUMA2 need a gate resistor?","answer":"No. The IDL12G65C5XUMA2 is a Schottky diode, not a MOSFET or IGBT — it has no gate terminal. It does not require a gate resistor. The question may arise from confusion with SiC MOSFETs, which do need a gate drive circuit."},{"question":"Is IDL12G65C5XUMA2 RoHS compliant?","answer":"Yes, it is ROHS3 Compliant per Infineon's lifecycle data."},{"question":"What is IDL12G65C5XUMA2's listed speed?","answer":"The datasheet lists the speed as No Recovery Time > 500 mA (Io), with a reverse recovery time of 0 ns. This means the diode exhibits zero stored charge and no reverse recovery transient under the rated forward current condition."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IDL12G65C5XUMA2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IDL12G65C5XUMA2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T10:39:33.080Z","lastPublished":"2026-07-16T10:39:33.080Z","indexable":true}}