{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IDK10G65C5XTMA2","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IDK10G65C5XTMA2","canonicalUrl":"https://icboms.com/infineon/IDK10G65C5XTMA2","factsUrl":"https://icboms.com/api/mcp/products/IDK10G65C5XTMA2","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolSiC™+ IDK10G65C5XTMA2, SiC Schottky diode, 650 V reverse voltage, 10 A average rectified current, zero reverse recovery time (trr=0 ns), PG-TO263-2 surface-mount package.","salesMarkdown":"## Zero-recovery SiC Schottky for hard-switched power stages The Infineon IDK10G65C5XTMA2 is a 650 V, 10 A SiC Schottky diode from the CoolSiC™+ generation, packaged in a PG-TO263-2 surface-mount case. ## 650 V blocking, 10 A forward — the PFC sweet spot With a maximum forward voltage of 1.8 V at 10 A and a junction temperature range from -55°C to 175°C, this diode handles the thermal stress of a 3 kW-class PFC stage without derating at the top end. The 300 pF capacitance at 1 V is low enough to keep the capacitive turn-on loss small in a 100 kHz hard-switched bridge. ## Active production, ROHS3, tape-and-reel ready The PG-TO263-2 footprint is shared with other CoolSiC™+ 10 A parts, so a BOM swap within the family keeps the PCB layout unchanged.","metaTitle":"Infineon IDK10G65C5XTMA2 CoolSiC™+ SiC Schottky Diode","metaDescription":"Infineon IDK10G65C5XTMA2 CoolSiC™+ SiC Schottky diode, 650V 10A, zero reverse recovery time (trr=0 ns), TO-263-2 package. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"CoolSiC™+","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Speed":"No Recovery Time > 500mA (Io)","Series":"CoolSiC™+","Package":"Tape & Reel (TR); Cut Tape (CT)","Technology":"SiC (Silicon Carbide) Schottky","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Capacitance @ Vr, F":"300pF @ 1V, 1MHz","Supplier Device Package":"PG-TO263-2","Reverse Recovery Time (trr)":"0 ns","Voltage - DC Reverse (Vr) (Max)":"650 V","Current - Average Rectified (Io)":"10A","Operating Temperature - Junction":"-55°C ~ 175°C","Voltage - Forward (Vf) (Max) @ If":"1.8 V @ 10 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$4.53","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$5.36000","currency":"USD"},{"qty":10,"price":"$4.81500","currency":"USD"},{"qty":100,"price":"$3.94520","currency":"USD"},{"qty":500,"price":"$3.35850","currency":"USD"},{"qty":1000,"price":"$3.07878","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/4f3644f57900dde7e16dc64ea3dca74b.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the reverse recovery time for IDK10G65C5XTMA2?","answer":"The reverse recovery time (trr) is 0 ns — a SiC Schottky diode has no stored charge to sweep out, so the recovery current is purely capacitive and completes in the same switching edge as the turn-off. This eliminates the switching loss tail that a silicon ultrafast diode would add at every hard commutation."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IDK10G65C5XTMA2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IDK10G65C5XTMA2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}