{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IDK08G120C5XTMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IDK08G120C5XTMA1","canonicalUrl":"https://icboms.com/infineon/IDK08G120C5XTMA1","factsUrl":"https://icboms.com/api/mcp/products/IDK08G120C5XTMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolSiC™+ IDK08G120C5XTMA1, Silicon Carbide Schottky Diode, 1200 V DC reverse, 22.8 A average rectified, 1.95 V forward voltage @ 8 A, 175°C junction, PG-TO263-2-1 package.","salesMarkdown":"The Infineon IDK08G120C5XTMA1 is a silicon carbide Schottky diode from the CoolSiC™+ family, rated for 1200 V DC reverse and 22.8 A average rectified current. It comes in a PG-TO263-2-1 surface-mount package, which is the D²Pak outline with two leads and a tab for thermal dissipation. The 1200 V blocking voltage puts this part in the high-voltage SiC tier used in power-factor correction (PFC) stages, solar inverters, and EV charging — applications where silicon diodes hit reverse-recovery losses hard. The Schottky structure means zero reverse-recovery charge, so the switching loss is dominated by the junction capacitance, not stored minority carriers. ## Forward drop and leakage — the thermal budget drivers Forward voltage is specified at 1.95 V maximum at 8 A — that is the conduction loss per amp at that current. At full rated current the Vf will be higher, so the designer should model the I²R loss at the operating point, not the 8 A test condition. Reverse leakage is 40 µA at 1200 V junction temperature. SiC Schottky leakage rises with temperature but stays orders of magnitude below a comparable silicon ultrafast diode, which matters for standby power in always-on supplies. Junction temperature range extends to 175°C — that is the full SiC capability. ## Package and mounting — TO-263-3 layout notes The PG-TO263-2-1 package is a D²Pak with two leads and a tab — the tab is the cathode. The large copper pad on the PCB should connect to the cathode net with multiple thermal vias to the inner-layer copper plane. The junction-to-case thermal resistance is not listed here, but the tab area is the primary heat path. Capacitance is 365 pF at 1 V and 1 MHz — that is the output capacitance (Coss) that the upstream switch sees during hard switching. It charges and discharges each cycle, adding a frequency-dependent loss term that the designer should include in the switching-loss calculation.","metaTitle":"Infineon IDK08G120C5XTMA1 SiC Schottky Diode, 1200 V, 22.8 A","metaDescription":"Infineon CoolSiC™+ silicon carbide Schottky diode, 1200 V reverse, 22.8 A average rectified, 175°C junction, TO-263-3 surface mount.","metaKeywords":null},"attributes":{"series":"CoolSiC™+","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Speed":"No Recovery Time > 500mA (Io)","Series":"CoolSiC™+","Package":"Tape & Reel (TR); Cut Tape (CT)","Diode Type":"Silicon Carbide Schottky","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Capacitance @ Vr, F":"365pF @ 1V, 1MHz","Supplier Device Package":"PG-TO263-2-1","Current - Reverse Leakage @ Vr":"40 µA @ 1200 V","Voltage - DC Reverse (Vr) (Max)":"1200 V","Current - Average Rectified (Io)":"22.8A","Operating Temperature - Junction":"-55°C ~ 175°C","Voltage - Forward (Vf) (Max) @ If":"1.95 V @ 8 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$4.87","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$4.87000","currency":"USD"},{"qty":10,"price":"$4.37800","currency":"USD"},{"qty":100,"price":"$3.58710","currency":"USD"},{"qty":500,"price":"$3.05364","currency":"USD"},{"qty":1000,"price":"$2.79930","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/e271ff42cee865fc20c3bcf7ee3722eb.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Where is the datasheet for the IDK08G120C5XTMA1?","answer":"The datasheet is available from Infineon's website under the CoolSiC™+ series. Search for the part number IDK08G120C5XTMA1 on the Infineon portal to download the full specification document."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IDK08G120C5XTMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IDK08G120C5XTMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}