{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IDK06G65C5XTMA2","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IDK06G65C5XTMA2","canonicalUrl":"https://icboms.com/infineon/IDK06G65C5XTMA2","factsUrl":"https://icboms.com/api/mcp/products/IDK06G65C5XTMA2","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolSiC™+ IDK06G65C5XTMA2, SiC Schottky diode, 650 V reverse, 6 A average rectified, zero reverse recovery time (trr 0 ns), -55°C to 175°C junction, PG-TO263-2 package.","salesMarkdown":"The IDK06G65C5XTMA2 is a 650 V, 6 A SiC Schottky diode from Infineon's CoolSiC™+ family. Its zero reverse recovery time (trr = 0 ns) eliminates the diode reverse-recovery charge that drives turn-on loss in hard-switched topologies — PFC boost stages, LLC converters, and inverter freewheel paths see the biggest efficiency gain. ## 650 V, 6 A — room to breathe in the power stage Rated for 650 V DC reverse and 6 A average forward current, this diode fits 400 V bus PFC stages and 350–400 V DC-link applications with healthy derating margin. The forward voltage drop is 1.8 V max at 6 A and 25 °C junction — the conduction loss is set by that Vf × Io product, and it rises with temperature per the SiC curve. Reverse leakage at rated voltage is 1.1 mA at 650 V — typical for a 6 A SiC Schottky, but worth checking against the thermal budget in high-ambient enclosures where leakage doubles with every 10 °C rise. ## 175 °C junction — high-temp environments covered That 175 °C ceiling suits designs where the diode sits near hot magnetics or in a sealed PSU enclosure — onboard chargers, server power supplies, industrial motor drives. The part is ROHS3 compliant and can be designed into new production without obsolescence risk. ## TO-263-3 package — rework and thermal note Housed in a PG-TO263-2 (D²Pak, TO-263-3) surface-mount package with an exposed metal tab. The tab is the cathode and the primary thermal path — the board copper area under it sets the junction-to-ambient thermal resistance. Rework with a hot-air station at 300–340 °C, preheat the board to 150 °C to avoid lifting the pad on a thick-copper power plane. Input capacitance is 190 pF at 1 V reverse bias and 1 MHz — low enough that the gate-driver sees negligible capacitive load on the switching node.","metaTitle":"IDK06G65C5XTMA2 CoolSiC™+ SiC Schottky Diode, 650 V, 6 A","metaDescription":"Infineon IDK06G65C5XTMA2 CoolSiC™+ SiC Schottky diode, 650 V, 6 A, zero reverse recovery time (trr=0 ns). Active production, ROHS3.","metaKeywords":null},"attributes":{"series":"CoolSiC™+","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Speed":"No Recovery Time > 500mA (Io)","Series":"CoolSiC™+","Package":"Tape & Reel (TR); Cut Tape (CT)","Technology":"SiC (Silicon Carbide) Schottky","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Capacitance @ Vr, F":"190pF @ 1V, 1MHz","Supplier Device Package":"PG-TO263-2","Reverse Recovery Time (trr)":"0 ns","Current - Reverse Leakage @ Vr":"1.1 mA @ 650 V","Voltage - DC Reverse (Vr) (Max)":"650 V","Current - Average Rectified (Io)":"6A","Operating Temperature - Junction":"-55°C ~ 175°C","Voltage - Forward (Vf) (Max) @ If":"1.8 V @ 6 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.8","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.80000","currency":"USD"},{"qty":10,"price":"$2.35400","currency":"USD"},{"qty":100,"price":"$1.90470","currency":"USD"},{"qty":500,"price":"$1.69308","currency":"USD"},{"qty":1000,"price":"$1.44970","currency":"USD"},{"qty":2000,"price":"$1.36505","currency":"USD"},{"qty":5000,"price":"$1.30962","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/3614849271ee6795e0b99c84409021a8.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the IDK06G65C5XTMA2 used for?","answer":"It is a 650 V, 6 A SiC Schottky diode used as a boost diode in PFC stages, freewheeling diode in LLC converters, and output rectifier in high-frequency switched-mode power supplies where zero reverse recovery eliminates switching losses."},{"question":"What is the reverse recovery time of IDK06G65C5XTMA2?","answer":"Reverse recovery time is 0 ns — the SiC Schottky barrier has no stored charge, so there is no reverse recovery event. This eliminates the turn-on loss spike in hard-switched converters."},{"question":"What package does IDK06G65C5XTMA2 come in?","answer":"It is supplied in a PG-TO263-2 package, which is a TO-263-3 (D²Pak) surface-mount package with two leads plus the exposed tab. The tab is the cathode connection."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IDK06G65C5XTMA2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IDK06G65C5XTMA2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}