{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IDK05G120C5XTMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IDK05G120C5XTMA1","canonicalUrl":"https://icboms.com/infineon/IDK05G120C5XTMA1","factsUrl":"https://icboms.com/api/mcp/products/IDK05G120C5XTMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolSiC™+ IDK05G120C5XTMA1, Silicon Carbide Schottky Diode, 1200 V DC reverse, 19.1 A average rectified, No Recovery Time > 500 mA, -55°C to 175°C junction, PG-TO263-2-1 surface mount.","salesMarkdown":"## 1.2 kV SiC Schottky with zero reverse-recovery — the switching-loss killer The IDK05G120C5XTMA1 is Infineon's CoolSiC™+ generation silicon carbide Schottky diode, rated for a 1200 V DC reverse voltage and 19.1 A average rectified forward current. The headline spec that makes this part a drop-in upgrade over a fast-recovery silicon diode is the zero reverse-recovery charge — listed as No Recovery Time > 500 mA — which means the diode does not store minority carriers. In a hard-switched PFC or inverter leg, that eliminates the reverse-recovery current spike that costs switching loss and rings up EMI in a Si FRED. ## Forward drop and junction temperature — the thermal budget Forward voltage is specified at 1.8 V maximum at 5 A forward current. That is the conduction loss reference for a typical operating point — at 19.1 A the Vf will be higher, but the 5 A point is where most continuous-load designs will size their average current. The junction temperature range runs from -55°C to 175°C, which is the full SiC temperature envelope. The 175°C maximum allows the die to run hotter than a 150°C Si junction, which buys margin in a tightly packed power stage where the ambient around the diode is elevated by nearby magnetics and MOSFETs. ## Package and mounting — the TO-263 footprint The part ships in a TO-263-3 (D²Pak) surface-mount package, supplier device code PG-TO263-2-1. This is a standard D²Pak footprint with a large exposed tab on the back side — the tab is the cathode connection and the primary thermal path. The board layout must provide a copper pad and thermal vias under the tab to pull heat into the inner-layer planes. The package is supplied on Tape & Reel or Cut Tape, which suits both reflow assembly and prototype hand-placing. ## Lifecycle and compliance It is listed as ROHS3 compliant, so no exemption-based restrictions on lead or other substances.","metaTitle":"IDK05G120C5XTMA1 Infineon CoolSiC™+ SiC Schottky Diode","metaDescription":"Infineon IDK05G120C5XTMA1 CoolSiC™+ silicon carbide Schottky diode, 1200 V reverse, 19.1 A average rectified, zero reverse-recovery charge.","metaKeywords":null},"attributes":{"series":"CoolSiC™+","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Speed":"No Recovery Time > 500mA (Io)","Series":"CoolSiC™+","Package":"Tape & Reel (TR); Cut Tape (CT)","Diode Type":"Silicon Carbide Schottky","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Capacitance @ Vr, F":"301pF @ 1V, 1MHz","Supplier Device Package":"PG-TO263-2-1","Current - Reverse Leakage @ Vr":"33 µA @ 1200 V","Voltage - DC Reverse (Vr) (Max)":"1200 V","Current - Average Rectified (Io)":"19.1A","Operating Temperature - Junction":"-55°C ~ 175°C","Voltage - Forward (Vf) (Max) @ If":"1.8 V @ 5 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$4.24","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$4.24000","currency":"USD"},{"qty":10,"price":"$3.80500","currency":"USD"},{"qty":100,"price":"$3.11730","currency":"USD"},{"qty":500,"price":"$2.65370","currency":"USD"},{"qty":1000,"price":"$2.43268","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/2800b9bb8d9d717d95e250ce6465455e.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is IDK05G120C5XTMA1 RoHS compliant?","answer":"Yes — the part is listed as ROHS3 Compliant."},{"question":"What does No Recovery Time > 500 mA mean for my design?","answer":"It means the SiC Schottky has essentially zero reverse-recovery charge. Unlike a silicon fast-recovery diode, there is no stored minority charge to sweep out when the diode commutates — so the reverse-recovery current spike and the associated switching loss are eliminated. This is the primary reason to select a SiC Schottky over a Si FRED in a hard-switched topology like a continuous-conduction-mode PFC or a phase-leg inverter."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IDK05G120C5XTMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IDK05G120C5XTMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}