{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IDH08G120C5XKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IDH08G120C5XKSA1","canonicalUrl":"https://icboms.com/infineon/IDH08G120C5XKSA1","factsUrl":"https://icboms.com/api/mcp/products/IDH08G120C5XKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolSiC+ IDH08G120C5XKSA1, SiC Schottky diode, 1200 V DC reverse, 8 A average rectified, zero reverse recovery time, -55°C to 175°C junction, PG-TO220-2-1 package.","salesMarkdown":"## 1200 V SiC Schottky — zero-recovery switching The Infineon IDH08G120C5XKSA1 is a CoolSiC+ silicon-carbide Schottky diode rated for 1200 V DC reverse and 8 A average rectified current, in a through-hole TO-220-2 package. Its defining characteristic is a reverse recovery time of 0 ns — there is no stored charge to sweep out, so the diode turns off the instant the current crosses zero. ## What zero trr buys the power stage In a hard-switched PFC or DC-DC converter, a silicon fast-recovery diode's reverse recovery current adds a loss term that scales with switching frequency and temperature. The IDH08G120C5XKSA1 eliminates that term entirely — the recovery is purely capacitive, so switching losses are limited to the device's output capacitance (365 pF at 1 V). This makes it a direct fit for continuous-conduction-mode boost stages where the diode sees hard commutation at every switching cycle. The 1.95 V forward drop at 8 A and 25°C is higher than a comparable silicon hyperfast diode, but the total loss at high frequency is lower because the switching component is near zero. The 40 µA leakage at 1200 V is typical for a 1200 V SiC Schottky and rises with junction temperature — the 175°C maximum junction rating gives the thermal budget to run the die hot without derating the blocking voltage. ## Package and mounting — TO-220-2 through-hole The PG-TO220-2-1 package is a standard two-lead TO-220 with the tab as the cathode. The through-hole mounting suits point-to-point wiring, heatsink attachment with a screw or clip, and hand-assembly rework. The junction-to-case thermal resistance is set by the die attach and the copper tab area — a greased interface to a heatsink is the normal mounting method for continuous 8 A operation at high ambient.","metaTitle":"Infineon IDH08G120C5XKSA1 SiC Schottky Diode, 1200 V, 8 A","metaDescription":"Infineon IDH08G120C5XKSA1 CoolSiC+ Schottky diode: 1200 V, 8 A, zero reverse recovery, 175°C Tj. Active production.","metaKeywords":null},"attributes":{"series":"CoolSiC™+","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Speed":"No Recovery Time > 500mA (Io)","Series":"CoolSiC™+","Package":"Tube","Technology":"SiC (Silicon Carbide) Schottky","Mounting Type":"Through Hole","Package / Case":"TO-220-2","lifecycle_stage":"eol_hot","Capacitance @ Vr, F":"365pF @ 1V, 1MHz","Supplier Device Package":"PG-TO220-2-1","Reverse Recovery Time (trr)":"0 ns","Current - Reverse Leakage @ Vr":"40 µA @ 1200 V","Voltage - DC Reverse (Vr) (Max)":"1200 V","Current - Average Rectified (Io)":"8A","Operating Temperature - Junction":"-55°C ~ 175°C","Voltage - Forward (Vf) (Max) @ If":"1.95 V @ 8 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.77","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$5.77000","currency":"USD"},{"qty":10,"price":"$4.84600","currency":"USD"},{"qty":100,"price":"$3.92020","currency":"USD"},{"qty":500,"price":"$3.48458","currency":"USD"},{"qty":1000,"price":"$2.98367","currency":"USD"},{"qty":2000,"price":"$2.80945","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/6dd9ecba6903f58f85ae919ffc1d757c.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What are the advantages of IDH08G120C5XKSA1 over a standard silicon diode?","answer":"The primary advantage is the zero reverse recovery time — a silicon fast-recovery diode of the same voltage and current rating has a stored charge that must be swept out during turn-off, creating a current spike and additional switching loss. The SiC Schottky eliminates that loss mechanism, which directly reduces heatsink size and allows higher switching frequencies in PFC and DC-DC stages."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IDH08G120C5XKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IDH08G120C5XKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}