{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IDH06SG60CXKSA2","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IDH06SG60CXKSA2","canonicalUrl":"https://icboms.com/infineon/IDH06SG60CXKSA2","factsUrl":"https://icboms.com/api/mcp/products/IDH06SG60CXKSA2","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolSiC™+ IDH06SG60CXKSA2 silicon carbide Schottky diode, 600 V reverse voltage, 6 A average rectified current, zero reverse recovery time, through-hole TO-220-2 package, -55°C to 175°C junction temperature.","salesMarkdown":"## Zero-switching-loss rectifier for hard-switched power stages The IDH06SG60CXKSA2 is a 600 V, 6 A silicon carbide Schottky diode from Infineon's CoolSiC™+ series. ## What zero trr means for the switching loop Zero reverse recovery time means the diode transitions from forward conduction to blocking with no stored charge to sweep out — the current waveform shows no reverse-recovery spike. This eliminates the turn-on loss contribution from the diode in the complementary switch, reduces EMI at the switching edge, and removes the need for snubber networks that Si fast-recovery diodes often require. The 130 pF junction capacitance at 1 V reverse bias is the only charge that must be delivered per switching cycle — at 100 kHz switching frequency, the capacitive switching loss is roughly 0.5 W, negligible compared to the several watts a Si diode would dissipate in recovery alone. ## Forward drop and leakage — thermal design anchors Maximum forward voltage is 2.3 V at 6 A and 25°C junction. This is higher than a comparable Si Schottky's Vf, but the zero-recovery benefit offsets the conduction loss in hard-switched topologies above 50 kHz. Reverse leakage is 50 µA at 600 V rated reverse voltage — a figure that rises with temperature, so the thermal design should budget for increased leakage at 175°C junction. ## Package and mounting — through-hole TO-220-2 Housed in a standard TO-220-2 through-hole package (PG-TO220-2-1), the diode mounts directly to a heatsink via the metal tab. The two-lead format — anode and cathode — simplifies layout in point-of-load rectifier positions. Through-hole mounting suits designs where vibration resistance or manual rework is a priority over board density. ## Lifecycle and compliance ROHS3 compliant, so no exemption expiry concern for EU-market builds. No official second source or pin-compatible alternate is documented in the available records — the BOM position depends on Infineon's supply chain.","metaTitle":"Infineon IDH06SG60CXKSA2 SiC Schottky Diode, 600 V 6 A","metaDescription":"Silicon Carbide Schottky diode, 600 V reverse voltage, 6 A average rectified current, zero reverse recovery time. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"CoolSiC™+","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Speed":"No Recovery Time > 500mA (Io)","Series":"CoolSiC™+","Package":"Tube","Diode Type":"Silicon Carbide Schottky","Mounting Type":"Through Hole","Package / Case":"TO-220-2","lifecycle_stage":"eol_hot","Capacitance @ Vr, F":"130pF @ 1V, 1MHz","Supplier Device Package":"PG-TO220-2-1","Reverse Recovery Time (trr)":"0 ns","Current - Reverse Leakage @ Vr":"50 µA @ 600 V","Voltage - DC Reverse (Vr) (Max)":"600 V","Current - Average Rectified (Io)":"6A","Operating Temperature - Junction":"-55°C ~ 175°C","Voltage - Forward (Vf) (Max) @ If":"2.3 V @ 6 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$4.36","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$4.36000","currency":"USD"},{"qty":10,"price":"$3.91700","currency":"USD"},{"qty":100,"price":"$3.20920","currency":"USD"},{"qty":500,"price":"$2.73196","currency":"USD"},{"qty":1000,"price":"$2.50442","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/d0e29620f78385710d3036ab34fb520f.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the reverse recovery time of IDH06SG60CXKSA2?","answer":"Zero nanoseconds — the silicon carbide Schottky structure has no minority carrier storage, so there is no reverse recovery charge to sweep out. This is the part's key advantage over fast-recovery silicon diodes."},{"question":"Is IDH06SG60CXKSA2 RoHS compliant?","answer":"Yes, it is rated ROHS3 Compliant, covering all six original RoHS substances plus the four phthalates added under EU 2015/863."},{"question":"What is the difference between IDH06SG60CXKSA2 and IDH06SG60C?","answer":"Both are 600 V, 6 A CoolSiC™ Schottky diodes from Infineon. The CXKSA2 suffix indicates the PG-TO220-2-1 package variant with a specific lead form and tube packaging. The IDH06SG60C uses a different TO-220 package variant. Electrical ratings are identical — the choice is a mechanical fit for the heatsink mounting hole pattern and lead bend."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IDH06SG60CXKSA2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IDH06SG60CXKSA2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}