{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IDH06G65C5XKSA2","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IDH06G65C5XKSA2","canonicalUrl":"https://icboms.com/infineon/IDH06G65C5XKSA2","factsUrl":"https://icboms.com/api/mcp/products/IDH06G65C5XKSA2","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolSiC+ SiC Schottky diode, IDH06G65C5XKSA2, 650 V reverse voltage, 6 A average rectified current, 0 ns reverse recovery time, 1.7 V forward voltage at 6 A, PG-TO220-2-1 through-hole package, -55 to 175 °C junction temperature.","salesMarkdown":"## Zero-recovery SiC Schottky for hard-switched power stages The Infineon IDH06G65C5XKSA2 is a 650 V, 6 A silicon carbide Schottky diode from the CoolSiC+ series. Its defining characteristic is a reverse recovery time of 0 ns — no stored charge to sweep out, so switching losses in the diode itself are effectively eliminated. That makes it a direct fit for continuous-conduction-mode PFC stages, LLC converters, and any hard-switched topology where a silicon ultrafast diode would leave a recovery tail. ## Conduction loss and thermal budget at 6 A Forward voltage is specified at 1.7 V maximum at 6 A and 25 °C junction. The -55 to 175 °C operating range covers automotive under-hood and industrial motor-drive environments without derating the voltage or current ceiling.","metaTitle":"Infineon IDH06G65C5XKSA2 SiC Schottky Diode","metaDescription":"Infineon CoolSiC+ Schottky diode, 650V 6A, zero reverse recovery (0 ns trr), 1.7V Vf at 6A, TO-220-2, -55 to 175°C. Active lifecycle, ROHS3. Quoted to order.","metaKeywords":null},"attributes":{"series":"CoolSiC™+","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Speed":"No Recovery Time > 500mA (Io)","Series":"CoolSiC™+","Package":"Tube","Technology":"SiC (Silicon Carbide) Schottky","Mounting Type":"Through Hole","Package / Case":"TO-220-2","lifecycle_stage":"eol_hot","Capacitance @ Vr, F":"190pF @ 1V, 1MHz","Supplier Device Package":"PG-TO220-2-1","Reverse Recovery Time (trr)":"0 ns","Current - Reverse Leakage @ Vr":"110 µA @ 650 V","Voltage - DC Reverse (Vr) (Max)":"650 V","Current - Average Rectified (Io)":"6A","Operating Temperature - Junction":"-55°C ~ 175°C","Voltage - Forward (Vf) (Max) @ If":"1.7 V @ 6 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.8","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$3.32000","currency":"USD"},{"qty":10,"price":"$2.97800","currency":"USD"},{"qty":100,"price":"$2.44010","currency":"USD"},{"qty":500,"price":"$2.07718","currency":"USD"},{"qty":1000,"price":"$1.90418","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/1ed37cc84a20d9e4c1ede1b431698537.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Does IDH06G65C5XKSA2 have zero reverse recovery?","answer":"Yes, the reverse recovery time (trr) is 0 ns — a SiC Schottky has no minority-carrier stored charge, so there is no recovery tail."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IDH06G65C5XKSA2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IDH06G65C5XKSA2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}