{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IDD06SG60CXTMA2","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IDD06SG60CXTMA2","canonicalUrl":"https://icboms.com/infineon/IDD06SG60CXTMA2","factsUrl":"https://icboms.com/api/mcp/products/IDD06SG60CXTMA2","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolSiC+ IDD06SG60CXTMA2 Silicon Carbide Schottky Diode, 600 V DC reverse, 6 A average rectified, No Recovery Time > 500 mA (Io), 0 ns trr, TO-252-3 (DPak) surface mount, -55 to 175 °C junction.","salesMarkdown":"## Zero-recovery SiC Schottky — what the trr = 0 ns means for the switching stage The IDD06SG60CXTMA2 is a 600 V, 6 A silicon carbide Schottky diode from Infineon's CoolSiC+ family. Its defining spec is zero reverse recovery time — the trr is listed as 0 ns, and the diode exhibits no recovery charge at any forward current or di/dt. That eliminates the turn-on loss spike a fast Si diode dumps into the FET every cycle. ## 600 V / 6 A envelope — where this part fits on the BOM Rated 600 V reverse and 6 A average forward current, the IDD06SG60CXTMA2 is sized for the boost diode in a continuous-conduction-mode PFC stage up to about 500 W, or the secondary-side rectifier in a 200-300 W LLC converter. The forward drop is 2.3 V max at 6 A, typical for a 600 V SiC Schottky of this current class — conduction loss is higher than a comparable Si hyperfast diode, but the switching-loss elimination more than makes up for it above 50 kHz. ## 175 °C junction — thermal headroom for tight enclosures That extra margin matters when the diode shares a heatsink with a hot MOSFET in a sealed power supply or a motor-drive PFC stage where ambient inside the enclosure hits 85-100 °C. Reverse leakage at 600 V is 50 µA — low enough that self-heating at high line is negligible. ## Package and footprint — the cathode tab is live Supplied in a TO-252-3 (DPak) surface-mount package, supplier device code PG-TO252-3. The exposed tab is the cathode — the PCB copper area under it must be connected to the output rail, not ground. The 130 pF capacitance at 1 V reverse is low enough that the diode does not add noticeable ringing in a hard-switched half-bridge. ## Lifecycle and compliance — no LTB risk, RoHS3 No official second-source or pin-compatible alternate is listed — this is a proprietary Infineon SiC die in a standard DPak footprint.","metaTitle":"IDD06SG60CXTMA2 Infineon CoolSiC Schottky Diode, 600V 6A","metaDescription":"Infineon IDD06SG60CXTMA2 SiC Schottky diode, 600V 6A, zero reverse recovery, TO-252-3. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"CoolSiC™+","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Speed":"No Recovery Time > 500mA (Io)","Series":"CoolSiC™+","Package":"Tape & Reel (TR); Cut Tape (CT)","Diode Type":"Silicon Carbide Schottky","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","lifecycle_stage":"eol_hot","Capacitance @ Vr, F":"130pF @ 1V, 1MHz","Supplier Device Package":"PG-TO252-3","Reverse Recovery Time (trr)":"0 ns","Current - Reverse Leakage @ Vr":"50 µA @ 600 V","Voltage - DC Reverse (Vr) (Max)":"600 V","Current - Average Rectified (Io)":"6A","Operating Temperature - Junction":"-55°C ~ 175°C","Voltage - Forward (Vf) (Max) @ If":"2.3 V @ 6 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.64","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$4.08000","currency":"USD"},{"qty":10,"price":"$3.66100","currency":"USD"},{"qty":100,"price":"$2.99980","currency":"USD"},{"qty":500,"price":"$2.55366","currency":"USD"},{"qty":1000,"price":"$2.34098","currency":"USD"},{"qty":2500,"price":"$2.34098","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/5d9cc9e3fb4aced6df24e5e4c6462ff2.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the closest pin-compatible alternative to IDD06SG60CXTMA2?","answer":"No official cross-reference or second-source is listed. The TO-252-3 (DPak) footprint is standard, so other 600 V, 6 A SiC Schottky diodes from Wolfspeed or ST may fit the same pad layout, but the electrical characteristics — especially the zero-recovery behavior and the 175 °C junction rating — are not guaranteed to match. Verify the gate-drive and thermal requirements before substituting."},{"question":"What is IDD06SG60CXTMA2's listed speed on this component line?","answer":"The speed is specified as No Recovery Time > 500 mA (Io). That means the diode exhibits zero reverse recovery at any forward current up to its 6 A rating — effectively a trr of 0 ns. This eliminates the turn-on loss spike that plagues fast-recovery Si diodes in hard-switched topologies."},{"question":"Is IDD06SG60CXTMA2 RoHS compliant?","answer":"Yes. Infineon certifies the part as ROHS3 Compliant."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IDD06SG60CXTMA2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IDD06SG60CXTMA2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}