{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IAUT300N08S5N011ATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IAUT300N08S5N011ATMA1","canonicalUrl":"https://icboms.com/infineon/IAUT300N08S5N011ATMA1","factsUrl":"https://icboms.com/api/mcp/products/IAUT300N08S5N011ATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ IAUT300N08S5N011ATMA1, N-channel MOSFET, 80 V drain-source, 410 A continuous drain, 1.1 mOhm Rds(on) at 100 A, PG-HSOF-8-1 package, -55°C to 175°C junction temperature.","salesMarkdown":"## 80 V, 1.1 mOhm — conduction loss floor for high-current switching The 1.1 mOhm figure is the value the designer uses for worst-case dissipation at full load; actual Rds(on) rises with junction temperature per the normalised curve in the datasheet. ## Gate charge and drive budget Total gate charge Qg is 231 nC at 10 V. The 16250 pF input capacitance at 40 V drain-source confirms this is a large-die device — the driver output stage needs enough peak current to charge and discharge that capacitance within the dead-time budget. The recommended drive voltage range is 6 V to 10 V for achieving the rated Rds(on). Using 6 V gate drive increases on-resistance above the 1.1 mOhm figure; the 10 V drive is the standard for reaching the minimum Rds(on) stated in the datasheet. The PG-HSOF-8-1 package (8-PowerSFN) is a surface-mount power package with an exposed drain pad on the bottom. The ±20 V maximum gate-source voltage is standard for this voltage class and compatible with most gate drivers.","metaTitle":"Infineon IAUT300N08S5N011ATMA1 N-Channel MOSFET, 80 V","metaDescription":"Infineon OptiMOS™ N-channel MOSFET, 80 Vdss, 410 A continuous drain, 1.1 mOhm Rds(on) at 100 A. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-PowerSFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.8V @ 275µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"1.1mOhm @ 100A, 10V","Power Dissipation (Max)":"375W (Tc)","Supplier Device Package":"PG-HSOF-8-1","Gate Charge (Qg) (Max) @ Vgs":"231 nC @ 10 V","Drain to Source Voltage (Vdss)":"80 V","Input Capacitance (Ciss) (Max) @ Vds":"16250 pF @ 40 V","Drive Voltage (Max Rds On, Min Rds On)":"6V, 10V","Current - Continuous Drain (Id) @ 25°C":"410A (Tj)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.6","priceTiers":[{"qty":1,"price":"$5.60000","currency":"USD"},{"qty":10,"price":"$4.70400","currency":"USD"},{"qty":100,"price":"$3.80560","currency":"USD"},{"qty":500,"price":"$3.38278","currency":"USD"},{"qty":1000,"price":"$2.89650","currency":"USD"},{"qty":2000,"price":"$2.72736","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/93deb58c4a7e1d63e2da2b26b2d66a41.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IAUT300N08S5N011ATMA1/alternatives.json"},"ai":{"faq":[{"question":"Is IAUT300N08S5N011ATMA1 RoHS compliant?","answer":"Yes, it is ROHS3 compliant."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IAUT300N08S5N011ATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IAUT300N08S5N011ATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-20T14:34:45.345Z","lastPublished":"2026-07-20T14:34:45.345Z","indexable":true}}