{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"HSG1002VE-TL-E","brand":"Renesas Electronics","brandSlug":"renesas","productSlug":"HSG1002VE-TL-E","canonicalUrl":"https://icboms.com/renesas/HSG1002VE-TL-E","factsUrl":"https://icboms.com/api/mcp/products/HSG1002VE-TL-E","rawCanonicalId":null},"summary":{"shortDescription":"onsemi HSG1002VE-TL-E, NPN RF transistor, 4-MFPAK surface-mount, gain 8 dB ~ 19.5 dB, fT 38 GHz, noise figure 0.7 dB ~ 1.8 dB @ 1.8 GHz ~ 5.8 GHz, Ic max 35 mA, Vceo 3.5 V, hFE 100 @ 5 mA/2 V.","salesMarkdown":"## Gain and noise — the two numbers that decide fit The 8 dB to 19.5 dB gain range is adjustable via bias; the lower end suits a buffer stage where compression is a concern, the upper end works for a low-level preamp. The noise figure of 0.7 dB to 1.8 dB across 1.8 GHz to 5.8 GHz means this transistor can sit ahead of a mixer without burying the signal in its own noise — critical for receiver sensitivity in C-band links. Compare this to the HFA3127RZ, a 5-NPN array with a noise figure of 3.5 dB at 1 GHz and an 8 GHz fT: the HSG1002VE-TL-E is a single-device solution for higher-frequency, lower-noise paths, not a general-purpose switching array. ## Lifecycle — active, no LTB watch needed The HSG1002VE-TL-E carries an active lifecycle status. No end-of-life notice or last-time-buy window is on record. For inventory planning, this part is a safe SKU to stock for ongoing production runs — no five-year replacement anxiety. Sourced and quoted to order through independent distribution; availability and current pricing confirmed at quote time.","metaTitle":"HSG1002VE-TL-E NPN RF Transistor, 38 GHz fT, 4-MFPAK","metaDescription":"Active NPN RF transistor in 4-MFPAK surface-mount package. Gain 8 dB to 19.5 dB, noise figure 0.7 dB to 1.8 dB at 1.8 GHz to 5.8 GHz.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"Not applicable","productStatus":"Active","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"Gain":"8dB ~ 19.5dB","Package":"Bulk","Power - Max":"200mW","Mounting Type":"Surface Mount","Package / Case":"4-SMD, Gull Wing","Transistor Type":"NPN","lifecycle_stage":"eol_hot","Frequency - Transition":"38GHz","Supplier Device Package":"4-MFPAK","Noise Figure (dB Typ @ f)":"0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz","Current - Collector (Ic) (Max)":"35mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"100 @ 5mA, 2V","Voltage - Collector Emitter Breakdown (Max)":"3.5V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.39","stockQuantity":0,"priceTiers":[{"qty":765,"price":"$0.39000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/ad2139e9665029c29d9d3b55b2de2221.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is HSG1002VE-TL-E's gain range?","answer":"The gain is specified from 8 dB to 19.5 dB, depending on bias conditions. This covers both low-level preamp and buffer-stage use in C-band circuits."},{"question":"What package does HSG1002VE-TL-E come in?","answer":"It ships in a 4-MFPAK surface-mount package (4-SMD, Gull Wing). The supplier device package is 4-MFPAK, and the orderable package form is Bulk."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/renesas/HSG1002VE-TL-E","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/renesas/HSG1002VE-TL-E when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}