{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"HN4A51JTE85LF","brand":"Toshiba Semiconductor","brandSlug":"toshiba","productSlug":"HN4A51JTE85LF","canonicalUrl":"https://icboms.com/toshiba/HN4A51JTE85LF","factsUrl":"https://icboms.com/api/mcp/products/HN4A51JTE85LF","rawCanonicalId":null},"summary":{"shortDescription":"Toshiba HN4A51JTE85LF dual PNP transistor, 120V Vceo, 100mA Ic, 100MHz fT, 300mW, SC-74A (SOT-753) package, surface mount.","salesMarkdown":"## 120V dual PNP in a SC-74A — what it brings to the board The Toshiba HN4A51JTE85LF is a dual PNP small-signal transistor in a surface-mount SC-74A (SOT-753) package. Each transistor is rated for a collector-emitter breakdown of 120V, a continuous collector current of 100mA, and a transition frequency of 100MHz. The 300mW power dissipation limit applies to the whole package, not per transistor. With a DC current gain (hFE) of 200 minimum at 2mA collector current and 6V Vce, it offers consistent gain for analog stages. The 150°C junction temperature rating gives thermal headroom in warm environments like industrial control cabinets or automotive auxiliary circuits. ## Saturation voltage and cutoff — the switching margins Vce saturation is specified at 300mV maximum with a 1mA base current driving 10mA collector current — a low enough drop for logic-level relay and solenoid drivers. Collector cutoff current is 100nA maximum, which keeps leakage negligible in high-impedance bias networks or off-state loads.","metaTitle":"HN4A51JTE85LF dual PNP transistor, 120V, 100mA, 100MHz","metaDescription":"Toshiba HN4A51JTE85LF dual PNP transistor, 120V Vceo, 100mA Ic, 100MHz fT, 300mW, SC-74A (SOT-753). Active, RoHS.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"RoHS Compliant","productStatus":"Active","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"Package":"Tape & Reel (TR); Cut Tape (CT)","Power - Max":"300mW","Mounting Type":"Surface Mount","Package / Case":"SC-74A, SOT-753","Transistor Type":"2 PNP (Dual)","lifecycle_stage":"eol_hot","Operating Temperature":"150°C (TJ)","Frequency - Transition":"100MHz","Supplier Device Package":"SMV","Vce Saturation (Max) @ Ib, Ic":"300mV @ 1mA, 10mA","Current - Collector (Ic) (Max)":"100mA","Current - Collector Cutoff (Max)":"100nA (ICBO)","DC Current Gain (hFE) (Min) @ Ic, Vce":"200 @ 2mA, 6V","Voltage - Collector Emitter Breakdown (Max)":"120V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.46","priceTiers":[{"qty":1,"price":"$0.46000","currency":"USD"},{"qty":10,"price":"$0.37400","currency":"USD"},{"qty":100,"price":"$0.25440","currency":"USD"},{"qty":500,"price":"$0.19080","currency":"USD"},{"qty":1000,"price":"$0.14310","currency":"USD"},{"qty":3000,"price":"$0.13117","currency":"USD"},{"qty":6000,"price":"$0.12323","currency":"USD"},{"qty":15000,"price":"$0.11527","currency":"USD"},{"qty":30000,"price":"$0.11250","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/c6c90e034da9315657549ce75374b84f.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/HN4A51JTE85LF/alternatives.json"},"ai":{"faq":[{"question":"Is HN4A51JTE85LF compatible with the SOT-753 footprint?","answer":"Yes. The package is listed as SC-74A, SOT-753 — these are the same industry-standard footprint. The part mounts directly to a standard SOT-753 land pattern."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/toshiba/HN4A51JTE85LF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/toshiba/HN4A51JTE85LF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}