{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"HN1D01FU,LF(T","brand":"Toshiba Semiconductor","brandSlug":"toshiba","productSlug":"HN1D01FULFT","canonicalUrl":"https://icboms.com/toshiba/HN1D01FULFT","factsUrl":"https://icboms.com/api/mcp/products/HN1D01FU%2CLF(T","rawCanonicalId":null},"summary":{"shortDescription":"Toshiba HN1D01FU,LF(T general-purpose diode array, 80 V reverse, 100 mA per diode, 4 ns trr, 2-pair common anode, US6 package, ROHS3 compliant.","salesMarkdown":"## 80 V, 100 mA per diode — small-signal switching array in US6 The Toshiba HN1D01FU,LF(T is a general-purpose diode array containing two pairs of diodes with a common anode configuration, each rated for 80 V reverse voltage and 100 mA average rectified current. With a 4 ns reverse recovery time, this array is suited for high-speed switching tasks in signal conditioning, protection clamping, and logic-level translation circuits. The 500 nA maximum reverse leakage at 80 V and 1.2 V forward drop at 100 mA define the static losses for low-power designs. ## US6 package — footprint and thermal considerations Housed in the 6-pin US6 package (SC-88 / SOT-363 variant), this surface-mount array occupies minimal board area and is compatible with standard reflow profiles. The junction temperature is rated to 125 °C maximum; thermal performance depends on PCB copper area and airflow in the end application.","metaTitle":"HN1D01FU,LF(T Diode Array, 80V 100mA, 4ns trr, US6","metaDescription":"Toshiba HN1D01FU,LF(T general-purpose diode array, 80V reverse, 100mA per diode, 4ns trr. Active, ROHS3.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Speed":"Small Signal =< 200mA (Io), Any Speed","Package":"Tape & Reel (TR); Cut Tape (CT)","Technology":"Standard","Mounting Type":"Surface Mount","Package / Case":"6-TSSOP, SC-88, SOT-363","lifecycle_stage":"eol_hot","Diode Configuration":"2 Pair Common Anode","Supplier Device Package":"US6","Reverse Recovery Time (trr)":"4 ns","Current - Reverse Leakage @ Vr":"500 nA @ 80 V","Voltage - DC Reverse (Vr) (Max)":"80 V","Operating Temperature - Junction":"125°C (Max)","Voltage - Forward (Vf) (Max) @ If":"1.2 V @ 100 mA","Current - Average Rectified (Io) (per Diode)":"100mA"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.45","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.45000","currency":"USD"},{"qty":10,"price":"$0.31900","currency":"USD"},{"qty":100,"price":"$0.16110","currency":"USD"},{"qty":500,"price":"$0.14276","currency":"USD"},{"qty":1000,"price":"$0.11110","currency":"USD"},{"qty":3000,"price":"$0.06449","currency":"USD"},{"qty":6000,"price":"$0.06166","currency":"USD"},{"qty":9000,"price":"$0.05333","currency":"USD"},{"qty":30000,"price":"$0.05233","currency":"USD"},{"qty":75000,"price":"$0.04333","currency":"USD"},{"qty":150000,"price":"$0.04266","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/353c7dc3d82bd5f272b537b2b673117e.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/toshiba/HN1D01FULFT","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/toshiba/HN1D01FULFT when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}