{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"HN1C01FU-Y,LXHF","brand":"Toshiba Semiconductor","brandSlug":"toshiba","productSlug":"HN1C01FU-Y~6LXHF","canonicalUrl":"https://icboms.com/toshiba/HN1C01FU-Y~6LXHF","factsUrl":"https://icboms.com/api/mcp/products/HN1C01FU-Y%2CLXHF","rawCanonicalId":null},"summary":{"shortDescription":"Toshiba Semiconductor HN1C01FU-Y,LXHF dual NPN transistor, 50 V collector-emitter breakdown, 150 mA collector current, 200 mW power dissipation, 80 MHz transition frequency, SOT-363 package, Tape & Reel.","salesMarkdown":"## SOT-363 dual NPN — footprint and integration story The HN1C01FU-Y,LXHF: The 0.65 mm lead pitch and 2.0 x 2.1 mm body footprint fit standard small-signal layouts; the two NPN die share a common collector pin, so the board trace for the collector bus must carry both channels' current. Rated for 150 mA collector current per transistor with a 50 V collector-emitter breakdown, this part handles low-to-mid current switching and amplification in automotive and industrial circuits. The 200 mW power dissipation ceiling means the total heat from both channels must stay under that limit — derate if ambient exceeds 25 °C. The 80 MHz transition frequency supports switching up to several MHz in pre-driver stages or signal conditioning; the minimum DC current gain of 120 at 2 mA, 6 V ensures consistent beta across the operating range for analog bias networks. ## Automotive-grade parametrics and bias conditions AEC-Q101 qualified per the description field, the HN1C01FU-Y,LXHF is screened for automotive reliability — the 100 nA maximum collector cutoff leakage at rated voltage holds up across temperature, critical for off-state power budgets in ECU modules. Vce saturation is 250 mV maximum at 10 mA base current and 100 mA collector current — this low saturation voltage keeps conduction losses minimal in saturated-switch applications like relay or LED drivers. The 150 mA collector current rating is the absolute maximum; continuous operation near this limit requires the board copper to sink the heat. ## Package format and reel options Surface mount only.","metaTitle":"Toshiba HN1C01FU-Y,LXHF Dual NPN Transistor, 50V, 150mA","metaDescription":"Toshiba HN1C01FU-Y,LXHF dual NPN transistor, 50V VCEO, 150mA Ic, 200mW, 80MHz ft, SOT-363. AEC-Q101 qualified. Active production, quoted to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Package":"Tape & Reel (TR); Cut Tape (CT)","Power - Max":"200mW","Mounting Type":"Surface Mount","Package / Case":"6-TSSOP, SC-88, SOT-363","Transistor Type":"2 NPN (Dual)","lifecycle_stage":"eol_hot","Frequency - Transition":"80MHz","Supplier Device Package":"US6","Vce Saturation (Max) @ Ib, Ic":"250mV @ 10mA, 100mA","Current - Collector (Ic) (Max)":"150mA","Current - Collector Cutoff (Max)":"100nA (ICBO)","DC Current Gain (hFE) (Min) @ Ic, Vce":"120 @ 2mA, 6V","Voltage - Collector Emitter Breakdown (Max)":"50V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.42","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.42000","currency":"USD"},{"qty":10,"price":"$0.35800","currency":"USD"},{"qty":100,"price":"$0.26710","currency":"USD"},{"qty":500,"price":"$0.20988","currency":"USD"},{"qty":1000,"price":"$0.16218","currency":"USD"},{"qty":3000,"price":"$0.14787","currency":"USD"},{"qty":6000,"price":"$0.13833","currency":"USD"},{"qty":15000,"price":"$0.13500","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/27ba16fbf634cda2392e13fc15192934.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the closest functional second-source for HN1C01FU-Y,LXHF?","answer":"The HN1C01FU-GR,LXHF is a direct peer — same dual NPN configuration, same 50 V breakdown, same 150 mA collector current, same 200 mW power dissipation, same 80 MHz transition frequency, and same SOT-363 package. The suffix difference (Y vs GR) typically indicates a hFE binning grade; the GR variant may have a different gain range. Check the specific hFE requirements of your circuit before substituting."},{"question":"What compliance documentation does Toshiba Semiconductor provide for HN1C01FU-Y,LXHF?","answer":"The part carries AEC-Q101 automotive qualification. Standard Toshiba documentation includes RoHS and REACH compliance declarations."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/toshiba/HN1C01FU-Y~6LXHF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/toshiba/HN1C01FU-Y~6LXHF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}