{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"HIP4080AIBZ","brand":"Renesas Electronics","brandSlug":"renesas","productSlug":"HIP4080AIBZ","canonicalUrl":"https://icboms.com/renesas/HIP4080AIBZ","factsUrl":"https://icboms.com/api/mcp/products/HIP4080AIBZ","rawCanonicalId":null},"summary":{"shortDescription":"Intersil HIP4080AIBZ full-bridge N-channel MOSFET gate driver, 2.6 A peak output, 9.5 V to 15 V supply, bootstrap circuit, PWM/logic interface, -40 to 85°C, 20-SOIC wide-body tube.","salesMarkdown":"## Gate-driver sizing for the full-bridge stage The HIP4080AIBZ is a full-bridge N-channel MOSFET gate driver rated for 2.6 A peak output current — enough to charge the gate of a pair of large-die TO-220 or D2PAK MOSFETs in under 100 ns, eliminating the need for an external booster stage in most DC motor drives up to a few hundred watts. Its bootstrap circuit generates the floating supply for the high-side FETs from a single 9.5 V to 15 V rail, so the board needs only one regulated supply instead of a separate isolated DC-DC converter for the high-side gate drive. ## Supply rails and logic interface The driver supply range is 9.5 V to 15 V, matching the 12 V rail common in industrial control panels and automotive auxiliary systems; the load voltage range is 8 V to 15 V, covering the same bus. The output configuration is a full bridge, so a single HIP4080AIBZ drives a brushed DC motor bidirectionally or two independent half-bridge loads such as a stepper motor phase. ## Temperature grade and package fit Housed in a 20-SOIC wide-body (7.50 mm body width, 0.295-inch), the footprint matches the standard SOIC-20W land pattern; the wider body provides pin-to-pin creepage distance for the high-voltage bootstrap node.","metaTitle":"HIP4080AIBZ Gate Driver, Full-Bridge, 2.6A Peak, 20-SOIC","metaDescription":"HIP4080AIBZ full-bridge N-channel MOSFET gate driver, 2.6 A peak output, 9.5-15 V supply, bootstrap circuit, -40 to 85°C, 20-SOIC. Active, ROHS3.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Analog & Data Acquisition"],"specifications":{"Package":"Tube","Features":"Bootstrap Circuit","Interface":"Logic, PWM","Load Type":"Capacitive and Resistive","Technology":"N-Channel MOSFET","Applications":"DC Motors, General Purpose","Mounting Type":"Surface Mount","Package / Case":"20-SOIC (0.295\\\", 7.50mm Width)","Voltage - Load":"8V ~ 15V","lifecycle_stage":"eol_hot","Voltage - Supply":"9.5V ~ 15V","Output Configuration":"Full Bridge","Current - Peak Output":"2.6A","Operating Temperature":"-40°C ~ 85°C (TA)","Supplier Device Package":"20-SOIC"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$6.6","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$6.60000","currency":"USD"},{"qty":10,"price":"$5.92900","currency":"USD"},{"qty":25,"price":"$5.60480","currency":"USD"},{"qty":100,"price":"$4.85740","currency":"USD"},{"qty":250,"price":"$4.60836","currency":"USD"},{"qty":500,"price":"$4.13506","currency":"USD"},{"qty":1000,"price":"$3.92450","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/85de72397c67ea14d501011c754e9bab.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the maximum peak output current of the HIP4080AIBZ?","answer":"The HIP4080AIBZ delivers 2.6 A peak output current, which drives the gate charge of parallel MOSFETs or large-die FETs without an external booster stage."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/renesas/HIP4080AIBZ","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/renesas/HIP4080AIBZ when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}