{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"HFA3127RZ","brand":"Renesas Electronics","brandSlug":"renesas","productSlug":"HFA3127RZ","canonicalUrl":"https://icboms.com/renesas/HFA3127RZ","factsUrl":"https://icboms.com/api/mcp/products/HFA3127RZ","rawCanonicalId":null},"summary":{"shortDescription":"HFA3127RZ, RF TRANS 5 NPN 12V 8GHZ 16QFN. 5 NPN transistors in a 16-VFQFN exposed-pad package, 8 GHz transition frequency, 3.5 dB noise figure at 1 GHz, 65 mA max collector current, 175°C junction temperature.","salesMarkdown":"## Five NPNs in one QFN — RF array for tight-layout front-ends The HFA3127RZ packs five NPN transistors into a 3x3 mm 16-QFN with exposed pad, saving board area compared to five discrete SOT-89s or SOT-23s. Each transistor is rated for a 12 V collector-emitter breakdown and a maximum collector current of 65 mA, making the array suited for multi-stage RF amplifiers, active baluns, or current-steering logic in the low-GHz range. The headline RF spec is an 8 GHz transition frequency, which means the part has useful gain well into C-band. For a 1 GHz LNA or driver stage, the typical noise figure sits at 3.5 dB — a figure that tells you the array is designed for moderate-noise applications rather than ultra-low-noise front-ends where a dedicated single-transistor part would be chosen. The 175°C junction temperature rating is unusual for an RF transistor array and points to deployment in high-ambient environments — compact power amplifiers, engine-bay telematics, or downhole instrumentation where the board sees sustained heat. The exposed pad helps pull that heat into the PCB ground plane. ## DC gain floor and bias design Minimum DC current gain is 40 at 10 mA collector current with 2 V Vce. That guaranteed floor lets you set bias resistors without over-designing for gain variation across the five transistors. The array is not a matched pair in the traditional sense — it is a monolithic set of five NPNs sharing the same substrate, so thermal tracking between devices is tighter than discrete parts on separate footprints. ## Active lifecycle — no obsolescence watch needed The HFA3127RZ carries an Active lifecycle status and is ROHS3 compliant. There is no NRND flag, no last-time-buy notice. For a BOM freeze or a new design, this part does not carry the obsolescence risk that haunts older RF transistor arrays. Sourced through independent distribution and quoted to order against an RFQ; current pricing and availability confirmed at quote time.","metaTitle":"HFA3127RZ 5 NPN RF Transistor Array, 8 GHz, 12V, 16-QFN","metaDescription":"HFA3127RZ RF transistor array: 5 NPN, 8 GHz fT, 3.5 dB noise figure at 1 GHz, 12 V Vceo, 65 mA Ic, 175°C Tj. Active, ROHS3. Sourced to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"Package":"Tube","Power - Max":"150mW","Mounting Type":"Surface Mount","Package / Case":"16-VFQFN Exposed Pad","Transistor Type":"5 NPN","lifecycle_stage":"eol_hot","Operating Temperature":"175°C (TJ)","Frequency - Transition":"8GHz","Supplier Device Package":"16-QFN (3x3)","Noise Figure (dB Typ @ f)":"3.5dB @ 1GHz","Current - Collector (Ic) (Max)":"65mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"40 @ 10mA, 2V","Voltage - Collector Emitter Breakdown (Max)":"12V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$12.24","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$12.24000","currency":"USD"},{"qty":10,"price":"$11.25200","currency":"USD"},{"qty":25,"price":"$10.78560","currency":"USD"},{"qty":100,"price":"$9.73610","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/40c8d234bcfdca13c8093b172c254293.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the noise figure of HFA3127RZ at 1 GHz?","answer":"The typical noise figure is 3.5 dB at 1 GHz. This is a moderate-noise figure suitable for driver stages and general-purpose RF amplification, not for ultra-low-noise receiver front-ends."},{"question":"Can I order HFA3127RZ in tube packaging?","answer":"Yes, the listed packaging for the HFA3127RZ is Tube. The part ships in a tube suitable for pick-and-place or manual assembly."},{"question":"What is HFA3127RZ's maximum power dissipation?","answer":"The maximum power dissipation is 150 mW. This is the total for the entire array; derate for ambient temperature above 25°C per the thermal resistance of the QFN package."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/renesas/HFA3127RZ","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/renesas/HFA3127RZ when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}