{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"HAT2201WP-EL-E","brand":"Renesas Electronics","brandSlug":"renesas","productSlug":"HAT2201WP-EL-E","canonicalUrl":"https://icboms.com/renesas/HAT2201WP-EL-E","factsUrl":"https://icboms.com/api/mcp/products/HAT2201WP-EL-E","rawCanonicalId":null},"summary":{"shortDescription":"Renesas HAT2201WP-EL-E, N-Channel MOSFET, 100 V Vdss, 15 A Id, 43 mOhm Rds(on), 21 nC Qg, 8-PowerWDFN, Surface Mount, Active.","salesMarkdown":"## 100 V, 15 A — the power-switching envelope That voltage and current combination places it in the sweet spot for 48 V to 72 V bus converters, battery-charger output stages, and motor-drive half-bridges where the DC link sits below 100 V. At 7.5 A the dissipation is about 2.4 W — the 8-PowerWDFN package with exposed pad (8-WPAK) must have adequate copper area on the PCB to keep the junction below the 150 °C maximum. ## Gate charge and switching speed Total gate charge is 21 nC at 10 V. For a 100 kHz switching frequency the average gate-drive current needed is 2.1 mA — well within the capability of a standard gate-driver IC. The 1450 pF input capacitance at 10 V drain-source gives a rough Ciss figure for the driver's peak current requirement during the Miller plateau. ## Package and thermal path The 8-PowerWDFN (8-WPAK) is a surface-mount package with an exposed pad on the underside. Without that plane the 15 A rating is not sustainable.","metaTitle":"HAT2201WP-EL-E N-Channel MOSFET, 100 V, 15 A, 43 mOhm","metaDescription":"Renesas HAT2201WP-EL-E N-channel MOSFET, 100 V drain-source, 15 A continuous, 43 mOhm Rds(on) at 7.5 A. Active lifecycle, 8-PowerWDFN package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"Not applicable","productStatus":"Active","categoryPath":[],"specifications":{"Package":"Bulk","FET Type":"N-Channel","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-PowerWDFN","lifecycle_stage":"eol_hot","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"43mOhm @ 7.5A, 10V","Supplier Device Package":"8-WPAK","Gate Charge (Qg) (Max) @ Vgs":"21 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"1450 pF @ 10 V","Current - Continuous Drain (Id) @ 25°C":"15A (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.17","stockQuantity":0,"priceTiers":[{"qty":257,"price":"$1.17000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/a51e82af28cc676b89e679d72c4f6238.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of HAT2201WP-EL-E at the rated current?","answer":"Maximum on-resistance is 43 mOhm at 7.5 A drain current with 10 V gate-to-source drive. This is the figure to use for conduction loss calculations at the operating point."},{"question":"What package does HAT2201WP-EL-E use?","answer":"The part is supplied in an 8-PowerWDFN surface-mount package, also designated as 8-WPAK by Renesas. It has an exposed thermal pad on the underside."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/renesas/HAT2201WP-EL-E","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/renesas/HAT2201WP-EL-E when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}