{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"HAT2054M-EL-E","brand":"Renesas Electronics","brandSlug":"renesas","productSlug":"HAT2054M-EL-E","canonicalUrl":"https://icboms.com/renesas/HAT2054M-EL-E","factsUrl":"https://icboms.com/api/mcp/products/HAT2054M-EL-E","rawCanonicalId":null},"summary":{"shortDescription":"Renesas HAT2054M-EL-E, N-Channel MOSFET, 30 V Vdss, 6.3 A Id, 31 mOhm Rds(on) @ 10 V, SOT-23-6 Thin / TSOT-23-6, Surface Mount, Bulk.","salesMarkdown":"## 30 V, 6.3 A N-channel in a TSOT-23-6 — load-switch and DC-DC fit The HAT2054M-EL-E is a 30 V, 6.3 A N-channel power MOSFET from Renesas in a TSOT-23-6 package. It is specified for surface-mount assembly and targets low-voltage load switching, DC-DC converter rails, and battery management where board space is tight. ## 31 mOhm on-resistance — conduction loss and gate-drive window The threshold voltage max is 2.5 V at 1 mA, so a 3.3 V logic gate drive will turn the device on but with higher on-resistance than the 10 V condition — budget the conduction loss accordingly. Input capacitance is 620 pF at 10 V drain-source, which keeps switching losses modest in the 100 kHz–500 kHz range typical of point-of-load converters. ## 1.05 W dissipation — thermal derating in a small package Maximum power dissipation is 1.05 W at 25 °C ambient, and the continuous drain current rating of 6.3 A assumes that thermal limit. In practice, the TSOT-23-6 package's junction-to-ambient thermal resistance means the usable current at elevated ambient temperatures drops — derate per the datasheet's thermal curve.","metaTitle":"HAT2054M-EL-E N-Channel MOSFET, 30 V, 6.3 A, TSOT-23-6","metaDescription":"HAT2054M-EL-E N-channel MOSFET, 30 V drain-source, 6.3 A continuous drain, 31 mOhm Rds(on) at 10 V. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"Not applicable","productStatus":"Active","categoryPath":[],"specifications":{"Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"SOT-23-6 Thin, TSOT-23-6","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.5V @ 1mA","Operating Temperature":"150°C","Rds On (Max) @ Id, Vgs":"31mOhm @ 3A, 10V","Power Dissipation (Max)":"1.05W (Ta)","Supplier Device Package":"6-TSOP","Drain to Source Voltage (Vdss)":"30 V","Input Capacitance (Ciss) (Max) @ Vds":"620 pF @ 10 V","Current - Continuous Drain (Id) @ 25°C":"6.3A (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.55","stockQuantity":0,"priceTiers":[{"qty":550,"price":"$0.55000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/d538a62c72a8c9c222b126c04ed00503.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the power dissipation of HAT2054M-EL-E?","answer":"Maximum power dissipation is 1.05 W at 25 °C ambient. This is the thermal limit for the TSOT-23-6 package and sets the ceiling for continuous current at elevated temperatures."},{"question":"Is HAT2054M-EL-E compatible with 3.3 V gate drive?","answer":"The maximum threshold voltage is 2.5 V at 1 mA, so a 3.3 V logic-level gate drive will turn the device on. However, the on-resistance is specified at 10 V gate drive; at 3.3 V the Rds(on) will be higher, so conduction loss must be recalculated for the actual gate voltage."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/renesas/HAT2054M-EL-E","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/renesas/HAT2054M-EL-E when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}