{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"HAT1035R-EL-E","brand":"Renesas Electronics","brandSlug":"renesas","productSlug":"HAT1035R-EL-E","canonicalUrl":"https://icboms.com/renesas/HAT1035R-EL-E","factsUrl":"https://icboms.com/api/mcp/products/HAT1035R-EL-E","rawCanonicalId":null},"summary":{"shortDescription":"HAT1035R-EL-E, P-Channel Power MOSFET, * series, Active lifecycle, ROHS3 Compliant, Bulk packaging.","salesMarkdown":"The HAT1035R-EL-E is a P-channel power MOSFET, a type of field-effect transistor designed for high-side switching applications where the load is connected to ground. In a P-channel device, the source is tied to the positive supply rail, and the drain connects to the load — a topology that simplifies gate drive in many battery-powered and automotive circuits because the gate voltage is referenced to the supply, not ground. This MOSFET carries an active lifecycle status. ## High-side switching — why P-channel matters For a high-side switch — where the MOSFET sits between the positive supply and the load — a P-channel device is the natural choice. The gate drive is simpler than an N-channel in that position: you pull the gate low (relative to the source) to turn it on, and the gate voltage swing is within the supply rail, so no charge pump or bootstrap circuit is needed. That makes the HAT1035R-EL-E a good fit for battery-protection circuits, power-distribution switches, and load-dump clamps in automotive or industrial equipment where the supply is a single positive rail.","metaTitle":"HAT1035R-EL-E P-Channel Power MOSFET, Active, ROHS3","metaDescription":"HAT1035R-EL-E P-channel power MOSFET from the * series. Active lifecycle, ROHS3 compliant, bulk packaging.","metaKeywords":null},"attributes":{"series":"*","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"*","Package":"Bulk","lifecycle_stage":"eol_hot"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.38","priceTiers":[{"qty":89,"price":"$3.38000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/a33bec61d11d55541d01351a5d4ed7ad.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/HAT1035R-EL-E/alternatives.json"},"ai":{"faq":[{"question":"Can HAT1035R-EL-E be used in high-side switching applications?","answer":"Yes, as a P-channel power MOSFET, the HAT1035R-EL-E is suited for high-side switching where the source connects to the positive supply and the drain drives the load. This topology simplifies gate drive in single-supply systems."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/renesas/HAT1035R-EL-E","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/renesas/HAT1035R-EL-E when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T18:51:14.863Z","lastPublished":"2026-07-22T18:51:14.863Z","indexable":true}}