{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"FM24CL16B-G","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"FM24CL16B-G","canonicalUrl":"https://icboms.com/infineon/FM24CL16B-G","factsUrl":"https://icboms.com/api/mcp/products/FM24CL16B-G","rawCanonicalId":null},"summary":{"shortDescription":"Infineon (formerly Cypress) F-RAM™ FM24CL16B-G, 16Kbit Ferroelectric RAM, I²C 1 MHz, 550 ns access, 2.7V–3.6V, -40°C to 85°C, 8-SOIC.","salesMarkdown":"## What this FRAM replaces on your board The FM24CL16B-G is a 16Kbit non-volatile memory from Infineon's F-RAM™ family, using ferroelectric storage instead of floating-gate cells. It talks I²C at up to 1 MHz and lives in a standard 8-SOIC footprint. The key difference from a serial EEPROM: no write-cycle limit. You can write to any address 10^14 times before the cell wears out, which makes it the part you pick when the system logs data every few seconds over a ten-year service life. The 550 ns access time looks slow compared to a parallel SRAM, but this is a serial I²C part. The bus runs at 1 MHz, so each bit takes 1 µs; the access time is the internal fetch latency, not the bus cycle. If you are replacing a 24LCxx EEPROM running at 400 kHz, the FM24CL16B-G will feel faster because it does not need a page-write delay or a polling loop. The write completes in the same bus cycle as the data transfer — no 5 ms wait. ## Supply and temperature — fits industrial and 3.3V logic The I²C interface is 3.3 V logic compatible.","metaTitle":"FM24CL16B-G F-RAM 16Kbit I2C 1MHz 8SOIC","metaDescription":"FM24CL16B-G F-RAM, 16Kbit (2K x 8), I²C 1MHz, 550ns access, 2.7V-3.6V, -40°C to 85°C, 8-SOIC. Active production, ROHS3.","metaKeywords":null},"attributes":{"series":"F-RAM™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"Mfr":"Infineon Technologies","Series":"F-RAM™","Package":"Tube","Technology":"FRAM (Ferroelectric RAM)","Access Time":"550 ns","Memory Size":"16Kbit","Memory Type":"Non-Volatile","Memory Format":"FRAM","Mounting Type":"Surface Mount","Package / Case":"8-SOIC (0.154\\\", 3.90mm Width)","Product Status":"Active","Clock Frequency":"1 MHz","lifecycle_stage":"eol_hot","Memory Interface":"I²C","Voltage - Supply":"2.7V ~ 3.6V","Base Product Number":"FM24CL16","Memory Organization":"2K x 8","Operating Temperature":"-40°C ~ 85°C (TA)","Supplier Device Package":"8-SOIC","Write Cycle Time - Word, Page":"-"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.7000","priceTiers":[{"qty":1,"price":"$1.70000","currency":"USD"},{"qty":10,"price":"$1.55400","currency":"USD"},{"qty":25,"price":"$1.51240","currency":"USD"},{"qty":50,"price":"$1.50460","currency":"USD"},{"qty":100,"price":"$1.34490","currency":"USD"},{"qty":250,"price":"$1.34100","currency":"USD"},{"qty":500,"price":"$1.32076","currency":"USD"},{"qty":1000,"price":"$1.26469","currency":"USD"},{"qty":5000,"price":"$1.17747","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/b3c2cec77a772c92b350ff4d06aa1708.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/FM24CL16B-G/alternatives.json"},"ai":{"faq":[{"question":"Can FM24CL16B-G replace a standard serial EEPROM like a 24LC16?","answer":"Yes, in most cases. The FM24CL16B-G is pin-compatible with the 24LCxx 8-pin SOIC footprint and uses the same I²C protocol at up to 1 MHz. The big difference is write endurance: FRAM has effectively unlimited writes, while EEPROM wears out after 1 million cycles. If your code does a write-every-second logging loop, the FRAM lasts the product lifetime; the EEPROM does not."},{"question":"Is FM24CL16B-G compatible with 3.3V systems?","answer":"Yes. The I²C bus levels are 3.3 V logic compatible. No level shifter needed."},{"question":"What is the write endurance of FM24CL16B-G?","answer":"FRAM technology does not have a specified write-cycle limit in the same way EEPROM does. The ferroelectric cell is rated for 10^14 read/write cycles — effectively unlimited for any practical product life. There is no page-write delay; each byte is written at bus speed."},{"question":"What is the difference between FRAM and EEPROM?","answer":"FRAM stores data using a ferroelectric crystal polarisation rather than a floating gate. This gives it three practical advantages: no write-cycle wear-out (10^14 cycles vs 1 million for EEPROM), no write-delay (each byte writes at bus speed, no 5 ms page-write wait), and lower active power during writes. The trade-off is lower density per die area — FRAM parts top out at a few megabits, while EEPROM goes to 4 Mbit."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/FM24CL16B-G","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/FM24CL16B-G when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}