{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"EMH3T2R","brand":"ROHM Semiconductor","brandSlug":"rohm","productSlug":"EMH3T2R","canonicalUrl":"https://icboms.com/rohm/EMH3T2R","factsUrl":"https://icboms.com/api/mcp/products/EMH3T2R","rawCanonicalId":null},"summary":{"shortDescription":"ROHM EMH3T2R dual NPN pre-biased transistor, 50V Vce breakdown, 100mA Ic, 4.7kΩ base resistor, 250MHz transition frequency, SOT-563 surface-mount package, 150mW max power dissipation.","salesMarkdown":"## Two NPNs with built-in bias — one less resistor network to place The ROHM EMH3T2R packs two NPN transistors, each with a 4.7 kΩ base resistor integrated, into a single SOT-563 package. That means each transistor is pre-biased — you don't need external base resistors for switching loads up to 100 mA collector current. The 50 V collector-emitter breakdown gives enough headroom for 24 V or 48 V logic-level interface rails, and the 250 MHz transition frequency keeps switching clean for low-speed PWM or relay drivers. Maximum power dissipation is 150 mW total for both devices, so this isn't a part for driving solenoids or motors directly — it's sized for signal-level switching, level translation, and driving the base of a bigger transistor or a MOSFET gate through a series resistor. ## SOT-563 footprint and bias resistor options The EMH3T2R uses a 4.7 kΩ base resistor (R1) only, with no emitter-base resistor (R2). That gives a simpler turn-on characteristic than parts like the EMH9T2R or EMG5T2R, which add a 47 kΩ emitter-base resistor for faster turn-off and noise immunity. If your circuit needs the extra pull-down to keep the transistor off during power-up or in a noisy environment, those siblings are worth a look — same package, same 250 MHz ft, same 150 mW dissipation, just different bias networks. ## Lifecycle and compliance For a production BOM, there's no urgency to qualify an alternate unless you want a second source for supply resilience.","metaTitle":"EMH3T2R dual NPN pre-biased transistor, 50V 100mA, SOT-563","metaDescription":"ROHM EMH3T2R dual NPN pre-biased transistor array. 50V Vce, 100mA Ic, 4.7kΩ base resistor, 250MHz ft, SOT-563 surface mount. Active production.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"Package":"Tape & Reel (TR); Cut Tape (CT)","Power - Max":"150mW","Mounting Type":"Surface Mount","Package / Case":"SOT-563, SOT-666","Transistor Type":"2 NPN - Pre-Biased (Dual)","lifecycle_stage":"eol_hot","Resistor - Base (R1)":"4.7kOhms","Frequency - Transition":"250MHz","Supplier Device Package":"EMT6","Vce Saturation (Max) @ Ib, Ic":"300mV @ 250µA, 5mA","Current - Collector (Ic) (Max)":"100mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"100 @ 1mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"50V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.41","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.41000","currency":"USD"},{"qty":10,"price":"$0.32900","currency":"USD"},{"qty":100,"price":"$0.22390","currency":"USD"},{"qty":500,"price":"$0.16790","currency":"USD"},{"qty":1000,"price":"$0.12593","currency":"USD"},{"qty":2000,"price":"$0.11544","currency":"USD"},{"qty":8000,"price":"$0.10844","currency":"USD"},{"qty":16000,"price":"$0.10144","currency":"USD"},{"qty":24000,"price":"$0.09900","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/e9f29fcc85a4f0121d89f29b135bacb1.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the hFE of EMH3T2R?","answer":"The DC current gain (hFE) is a minimum of 100 at 1 mA collector current and 5 V collector-emitter voltage."},{"question":"Is EMH3T2R RoHS compliant?","answer":"Yes, EMH3T2R is ROHS3 compliant."},{"question":"What's the closest functional equivalent to EMH3T2R?","answer":"The EMG3T2R is a close sibling — same dual NPN pre-biased configuration, same 4.7 kΩ base resistor, same 50 V breakdown and 100 mA rating, same SOT-563 package. The main difference is a lower Vce saturation of 150 mV versus 300 mV at the same test conditions, which may matter for very low-drop switching."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/rohm/EMH3T2R","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/rohm/EMH3T2R when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}