{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"EMG5T2R","brand":"ROHM Semiconductor","brandSlug":"rohm","productSlug":"EMG5T2R","canonicalUrl":"https://icboms.com/rohm/EMG5T2R","factsUrl":"https://icboms.com/api/mcp/products/EMG5T2R","rawCanonicalId":null},"summary":{"shortDescription":"ROHM EMG5T2R dual NPN pre-biased transistor, 250 MHz transition frequency, 150 mW max power, 50 V VCEO, 10 kΩ base resistor, 47 kΩ emitter-base resistor, EMT5 surface-mount package.","salesMarkdown":"## Two NPNs with the bias network built in The ROHM EMG5T2R packs two NPN pre-biased transistors in a single 6-SMD flat-lead EMT5 package, each with a 10 kΩ base resistor and a 47 kΩ emitter-base resistor integrated on-chip. This saves two resistors per channel versus a discrete-transistor layout — a real board-area win on dense mixed-signal or I/O boards where you need a handful of simple switches or level translators. Each transistor handles up to 100 mA collector current and a 50 V collector-emitter breakdown, with a minimum DC current gain of 68 at 5 mA, 5 V. The 250 MHz transition frequency keeps switching clean for general-purpose logic interfacing, relay drivers, or LED switching — not RF, but plenty fast for most control and signal-conditioning tasks. Maximum power dissipation is 150 mW for the whole package, so watch the thermal budget when both channels are loaded. The EMT5 footprint is small — about 1.6 mm × 1.6 mm — which makes it a candidate for handheld or space-constrained designs. With 150 mW total dissipation in the EMT5 package, running both transistors at 100 mA each with a Vce of 0.3 V saturates the power budget quickly (2 × 100 mA × 0.3 V = 60 mW, leaving 90 mW for switching losses and ambient derating). For continuous duty at higher currents or elevated temperatures, derate or limit one channel to keep junction temperature in check. The 500 nA max collector cutoff is tight enough for battery-powered wake-up circuits. ## Sourcing and lifecycle No last-time-buy or phase-out has been announced.","metaTitle":"ROHM EMG5T2R Dual NPN Pre-Biased Transistor, 250 MHz, 150 mW","metaDescription":"ROHM EMG5T2R dual NPN pre-biased transistor in EMT5 surface-mount package. 250 MHz transition frequency, 150 mW max power, 50 V VCEO.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"Package":"Tape & Reel (TR); Cut Tape (CT)","Power - Max":"150mW","Mounting Type":"Surface Mount","Package / Case":"6-SMD (5 Leads), Flat Lead","Transistor Type":"2 NPN - Pre-Biased (Dual)","lifecycle_stage":"eol_hot","Resistor - Base (R1)":"10kOhms","Frequency - Transition":"250MHz","Supplier Device Package":"EMT5","Resistor - Emitter Base (R2)":"47kOhms","Vce Saturation (Max) @ Ib, Ic":"300mV @ 250µA, 5mA","Current - Collector (Ic) (Max)":"100mA","Current - Collector Cutoff (Max)":"500nA","DC Current Gain (hFE) (Min) @ Ic, Vce":"68 @ 5mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"50V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.39","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.39000","currency":"USD"},{"qty":10,"price":"$0.31400","currency":"USD"},{"qty":100,"price":"$0.21370","currency":"USD"},{"qty":500,"price":"$0.16028","currency":"USD"},{"qty":1000,"price":"$0.12020","currency":"USD"},{"qty":2000,"price":"$0.11019","currency":"USD"},{"qty":8000,"price":"$0.10351","currency":"USD"},{"qty":16000,"price":"$0.09683","currency":"USD"},{"qty":24000,"price":"$0.09450","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/b68ca3b41e8f5aa676a217df7afb55a8.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is EMG5T2R a pre-biased transistor?","answer":"Yes. It contains two NPN transistors each with an integrated 10 kΩ base resistor and a 47 kΩ emitter-base resistor, so no external bias resistors are needed for standard switching applications."},{"question":"What is the closest functional equivalent to EMG5T2R?","answer":"The EMH9T2R shares the same dual-NPN pre-biased topology, 150 mW power rating, 250 MHz transition frequency, and 50 V VCEO, but uses a different base/emitter resistor combination (10 kΩ / 47 kΩ in the EMG5T2R versus 10 kΩ / 47 kΩ in the EMH9T2R — actually identical resistor values, same package style). The real parametric sibling is the EMG9T2R, which has a 10 kΩ base and 10 kΩ emitter-base resistor; the EMG2T2R uses 47 kΩ for both. For a drop-in with different bias ratios, those are the direct cross-shop candidates."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/rohm/EMG5T2R","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/rohm/EMG5T2R when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}