{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"CY7C2663KV18-550BZXI","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"CY7C2663KV18-550BZXI","canonicalUrl":"https://icboms.com/infineon/CY7C2663KV18-550BZXI","factsUrl":"https://icboms.com/api/mcp/products/CY7C2663KV18-550BZXI","rawCanonicalId":null},"summary":{"shortDescription":"Infineon Technologies CY7C2663KV18-550BZXI QDR II+ SRAM, 144 Mbit (8M x 18), 550 MHz clock, Parallel interface, 1.7V-1.9V supply, -40°C to 85°C, 165-FBGA (15x17 mm), Tray.","salesMarkdown":"## 550 MHz QDR II+ SRAM — 144 Mbit in a 165-ball FBGA The CY7C2663KV18-550BZXI is a 144 Mbit synchronous SRAM organized as 8M x 18, built on Infineon's QDR II+ architecture. The 550 MHz clock rate defines the peak read/write throughput — at double-data-rate on both ports, the internal bandwidth supports back-to-back transactions without dead cycles, which is the defining advantage of the QDR family over traditional synchronous SRAMs. Housed in a 165-ball FBGA (15x17 mm), the package uses a fine-pitch ball array that requires controlled impedance routing on the PCB. ## Industrial temperature grade and supply rails The parallel memory interface requires matched trace lengths on the address and data lines to maintain setup/hold margins at 550 MHz. The 165-FBGA footprint's centre-ground ball assignment helps contain loop inductance in the supply path. ## Active lifecycle — sourcing posture Infineon lists the CY7C2663KV18-550BZXI as Active.","metaTitle":"CY7C2663KV18-550BZXI Infineon QDR II+ SRAM, 144Mbit, 550 MHz","metaDescription":"Infineon CY7C2663KV18-550BZXI QDR II+ SRAM, 144 Mbit (8M x 18), 550 MHz clock, 1.7-1.9V, industrial temp, 165-FBGA. Active lifecycle, sourced to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Tray","Technology":"SRAM - Synchronous, QDR II+","Memory Size":"144Mbit","Memory Type":"Volatile","Memory Format":"SRAM","Mounting Type":"Surface Mount","Package / Case":"165-LBGA","Product Status":"Active","Clock Frequency":"550 MHz","lifecycle_stage":"eol_hot","Memory Interface":"Parallel","Voltage - Supply":"1.7V ~ 1.9V","Base Product Number":"CY7C2663","Memory Organization":"8M x 18","Operating Temperature":"-40°C ~ 85°C (TA)","Supplier Device Package":"165-FBGA (15x17)","Write Cycle Time - Word, Page":"-"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$409.1125","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/de7713fce0919e9c3cb64ff248f7fd20.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What supply voltage does CY7C2663KV18-550BZXI require?","answer":"The core supply range is 1.7V to 1.9V, typically a 1.8V rail. The tight tolerance means the regulator must stay within 200 mV of nominal under load — a standard 1.8V LDO with 1% accuracy meets this comfortably."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/CY7C2663KV18-550BZXI","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/CY7C2663KV18-550BZXI when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}