{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"CY7C2644KV18-333BZXI","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"CY7C2644KV18-333BZXI","canonicalUrl":"https://icboms.com/infineon/CY7C2644KV18-333BZXI","factsUrl":"https://icboms.com/api/mcp/products/CY7C2644KV18-333BZXI","rawCanonicalId":null},"summary":{"shortDescription":"Cypress CY7C2644KV18-333BZXI, QDR II+ synchronous SRAM, 144 Mbit (4M x 36), 333 MHz clock, 1.7–1.9 V supply, -40 to 85 °C, 165-LBGA, Tray.","salesMarkdown":"The Cypress CY7C2644KV18-333BZXI is a 144 Mbit synchronous SRAM organised as 4M x 36, clocked at 333 MHz over a parallel QDR II+ interface. This is a high-bandwidth memory part designed for applications that cannot tolerate DRAM refresh latency — think network packet buffers, test instrumentation capture memory, and high-end FPGA co-processing where every clock cycle of deterministic access matters. The 165-ball LBGA (15 x 17 mm footprint) demands a multi-layer PCB with controlled impedance traces for the 333 MHz clock and data lines. Verify your layout against the Cypress application note for QDR II+ signal integrity — stub lengths and via placement matter at this speed. ## Lifecycle reality — EOL hot","metaTitle":"Cypress CY7C2644KV18-333BZXI 144Mbit QDR II+ SRAM, 333 MHz","metaDescription":"Cypress CY7C2644KV18-333BZXI synchronous QDR II+ SRAM, 144 Mbit (4M x 36), 333 MHz clock, 165-LBGA, -40 to 85 °C. EOL hot — sourced to order against RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Tray","Technology":"SRAM - Synchronous, QDR II+","Memory Size":"144Mbit","Memory Type":"Volatile","Memory Format":"SRAM","Mounting Type":"Surface Mount","Package / Case":"165-LBGA","Product Status":"Active","Clock Frequency":"333 MHz","lifecycle_stage":"eol_hot","Memory Interface":"Parallel","Voltage - Supply":"1.7V ~ 1.9V","Base Product Number":"CY7C2644","Memory Organization":"4M x 36","Operating Temperature":"-40°C ~ 85°C (TA)","Supplier Device Package":"165-FBGA (15x17)","Write Cycle Time - Word, Page":"-"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$502.7000","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/e74c1356e3ab1b9a5b2285da07f46bb5.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/CY7C2644KV18-333BZXI/alternatives.json"},"ai":{"faq":[{"question":"What is CY7C2644KV18-333BZXI's listed package on this component line?","answer":"The CY7C2644KV18-333BZXI is listed in a 165-LBGA (165-FBGA, 15×17 mm body) package, supplied in tray."},{"question":"What technology does the CY7C2644KV18-333BZXI use — SRAM, DRAM, or something else?","answer":"The device is a synchronous SRAM using QDR II+ technology — the II+ variant adds a separate write clock that removes the bus-turnaround dead cycle, giving it full-duplex operation on a parallel interface. It is a volatile memory organized as 4M × 36."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/CY7C2644KV18-333BZXI","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/CY7C2644KV18-333BZXI when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}