{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"CY7C2570XV18-633BZXC","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"CY7C2570XV18-633BZXC","canonicalUrl":"https://icboms.com/infineon/CY7C2570XV18-633BZXC","factsUrl":"https://icboms.com/api/mcp/products/CY7C2570XV18-633BZXC","rawCanonicalId":null},"summary":{"shortDescription":"Infineon Technologies CY7C2570XV18-633BZXC, Synchronous DDR II+ SRAM, 72Mbit, 2M x 36 organization, 633 MHz clock, 1.7V-1.9V supply, 165-FBGA (13x15) tray.","salesMarkdown":"## 72Mbit DDR II+ SRAM at 633 MHz The CY7C2570XV18-633BZXC is a 72Mbit Synchronous DDR II+ SRAM from Infineon (formerly Cypress), organized as 2M x 36 bits. ## 633 MHz clock and 2M x 36 organization The 633 MHz clock rate on the DDR II+ interface means data is transferred on both edges, giving an effective data rate of 1266 MT/s per pin. The 2M x 36 organization provides 72Mbit of storage with a 36-bit-wide data bus, suiting it for high-throughput buffer applications in networking or telecom line cards. The parallel memory interface connects directly to a controller's SRAM port without serialization overhead — the 36-bit bus width matches common network processor or FPGA memory controller widths, reducing glue logic.","metaTitle":"CY7C2570XV18-633BZXC 72Mbit DDR II+ SRAM, 633 MHz","metaDescription":"Infineon CY7C2570XV18-633BZXC 72Mbit Synchronous DDR II+ SRAM, 2M x 36, 633 MHz, 1.7V-1.9V, 165-FBGA. Active production, sourced to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"title":"CY7C2570XV18-633BZXC","Package":"Tray","Technology":"SRAM - Synchronous, DDR II+","Memory Size":"72Mbit","Memory Type":"Volatile","Memory Format":"SRAM","Mounting Type":"Surface Mount","Package / Case":"165-LBGA","Clock Frequency":"633 MHz","lifecycle_stage":"eol_hot","Memory Interface":"Parallel","Voltage - Supply":"1.7V ~ 1.9V","Base Product Number":"CY7C2570","Memory Organization":"2M x 36","Operating Temperature":"0°C ~ 70°C (TA)","Supplier Device Package":"165-FBGA (13x15)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$421.8375","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/06d2ace7c08318db6e38aafb646ff6dc.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/CY7C2570XV18-633BZXC/alternatives.json"},"ai":{"faq":[{"question":"What replaces the CY7C2570XV18-633BZXC?","answer":"No official successor MPN or second-source cross-reference appears in the available ledger for this part. If the design can tolerate a different package or pinout, sourcing a functionally equivalent DDR II+ SRAM from the same density and organization class with an active lifecycle status is the engineering path — but firmware and board-level compatibility must be re-verified, as register maps and timing parameters vary across vendors."},{"question":"What supply voltage tolerance should I design for?","answer":"The operating supply range is 1.7 V to 1.9 V — a 200 mV window centered on 1.8 V nominal. A ±5% regulator tolerance on a nominal 1.8 V rail gives 1.71 V to 1.89 V; the lower bound sits 10 mV above the listed minimum. Budget for IR drop, transient response, and any shared-rail loading to keep the memory supply above 1.7 V under all operating conditions."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/CY7C2570XV18-633BZXC","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/CY7C2570XV18-633BZXC when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}