{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"CY7C2168KV18-550BZC","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"CY7C2168KV18-550BZC","canonicalUrl":"https://icboms.com/infineon/CY7C2168KV18-550BZC","factsUrl":"https://icboms.com/api/mcp/products/CY7C2168KV18-550BZC","rawCanonicalId":null},"summary":{"shortDescription":"Infineon Technologies CY7C2168KV18-550BZC DDR II+ synchronous SRAM, 18Mbit (1M x 18), 550 MHz, 165-FBGA (13x15 mm), 1.7V-1.9V, Tray.","salesMarkdown":"## 550 MHz DDR II+ SRAM — BOM-fit for high-throughput data paths The CY7C2168KV18-550BZC is an 18 Mbit synchronous SRAM from Infineon, organized as 1M x 18 and clocked at 550 MHz using a DDR II+ double-data-rate interface — each clock edge transfers data, so the effective bandwidth is double the clock rate. This places it in the class of high-speed memory used in network switches, base stations, and test equipment where the processor or FPGA needs low-latency, high-bandwidth scratchpad storage without the refresh overhead of DRAM. The 1.7 V to 1.9 V core supply is a single-rail design — no separate I/O voltage — which simplifies the power tree but means the supply tolerance must be held within 200 mV across the load transient. The 165-ball FBGA package (13x15 mm body per the supplier device package) demands a controlled-impedance layout; the 0.80 mm ball pitch is routable on a standard 4-layer PCB with microvia fan-out under the BGA. ## Active lifecycle — no obsolescence watch needed The base product number CY7C2168 covers the family; the KV18-550BZC suffix encodes the 550 MHz speed grade, the 165-FBGA package, and the commercial temperature range. For extended-temperature or outdoor applications, a different speed grade or a wider-temperature SRAM family would be needed. ## Package and supply — what the layout engineer needs The 165-FBGA (13x15 mm) package is the footprint constraint. The ball map is not in this record, but the 0.80 mm pitch is standard for this density — the PCB layout should allocate at least two signal layers for fan-out, with the core supply (1.7 V to 1.9 V) decoupled with 100 nF MLCCs per quadrant near the BGA. The parallel memory interface means all 18 data lines plus address and control signals route to the controller; signal integrity at 550 MHz DDR requires matched trace lengths within 50 ps skew. The part ships in Tray packaging — not tape-and-reel — so it is suited for low-to-medium volume assembly or hand-placed prototypes. For high-volume pick-and-place, confirm the tray-to-tape conversion availability with the supplier at RFQ time.","metaTitle":"CY7C2168KV18-550BZC Infineon 18Mbit DDR II+ SRAM, 550 MHz","metaDescription":"CY7C2168KV18-550BZC Infineon 18Mbit (1M x 18) DDR II+ synchronous SRAM, 550 MHz clock, 165-FBGA, 1.7V-1.9V supply. Active lifecycle, available to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Tray","Technology":"SRAM - Synchronous, DDR II+","Memory Size":"18Mbit","Memory Type":"Volatile","Memory Format":"SRAM","Mounting Type":"Surface Mount","Package / Case":"165-LBGA","Product Status":"Active","Clock Frequency":"550 MHz","lifecycle_stage":"eol_hot","Memory Interface":"Parallel","Voltage - Supply":"1.7V ~ 1.9V","Base Product Number":"CY7C2168","Memory Organization":"1M x 18","Operating Temperature":"0°C ~ 70°C (TA)","Supplier Device Package":"165-FBGA (13x15)","Write Cycle Time - Word, Page":"-"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$56.9360","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/b741ffa77fe698d9ecdb08d15bb8d261.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the memory organization and interface of this SRAM?","answer":"The CY7C2168KV18-550BZC is organized as 1M x 18 bits (18 Mbit total) with a parallel memory interface. It uses a DDR II+ synchronous architecture, meaning data is transferred on both clock edges at 550 MHz for an effective 1.1 G transfers per second on the data bus."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/CY7C2168KV18-550BZC","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/CY7C2168KV18-550BZC when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}