{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"CY7C1911KV18-300BZXC","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"CY7C1911KV18-300BZXC","canonicalUrl":"https://icboms.com/infineon/CY7C1911KV18-300BZXC","factsUrl":"https://icboms.com/api/mcp/products/CY7C1911KV18-300BZXC","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CY7C1911KV18-300BZXC, QDR II synchronous SRAM, 18 Mbit (2M x 9), 300 MHz clock, parallel interface, 1.7 V–1.9 V supply, 0°C–70°C, 165-FBGA (13x15 mm), Tray.","salesMarkdown":"## 300 MHz QDR II SRAM — 18 Mbit in a 165-ball FBGA It operates at a 300 MHz clock frequency, delivering back-to-back read and write transactions on every clock edge without dead cycles — the defining advantage of the QDR II bus for high-throughput buffer applications. Typical deployment targets include network line cards, telecom switch fabrics, and high-speed data acquisition systems where deterministic latency and sustained bandwidth are required. At 300 MHz, the QDR II architecture allows independent read and write ports to operate simultaneously, effectively doubling the data bandwidth compared to a common-I/O SRAM at the same clock rate. For a 9-bit-wide device, the peak data rate is 600 MB/s (300 MHz x 2 transfers per clock x 9 bits). The 165-FBGA package requires a controlled-impedance PCB stackup and matched trace lengths for the address, data, and control buses — a four-layer board with a dedicated ground plane is the practical minimum.","metaTitle":"CY7C1911KV18-300BZXC QDR II SRAM, 18 Mbit, 300 MHz, 165-FBGA","metaDescription":"Infineon CY7C1911KV18-300BZXC 18 Mbit synchronous QDR II SRAM, 300 MHz clock, parallel interface, 1.7 V–1.9 V supply, 0°C–70°C, 165-FBGA.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Tray","Technology":"SRAM - Synchronous, QDR II","Memory Size":"18Mbit","Memory Type":"Volatile","Memory Format":"SRAM","Mounting Type":"Surface Mount","Package / Case":"165-LBGA","Product Status":"Active","Clock Frequency":"300 MHz","lifecycle_stage":"eol_hot","Memory Interface":"Parallel","Voltage - Supply":"1.7V ~ 1.9V","Base Product Number":"CY7C1911","Memory Organization":"2M x 9","Operating Temperature":"0°C ~ 70°C (TA)","Supplier Device Package":"165-FBGA (13x15)","Write Cycle Time - Word, Page":"-"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$30.8500","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/66c682634920522619c3dfcc3a818445.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/CY7C1911KV18-300BZXC/alternatives.json"},"ai":{"faq":[{"question":"Is CY7C1911KV18-300BZXC compatible with 1.8V QDR II systems?","answer":"Yes. The device is a synchronous QDR II SRAM and is designed to interface directly with QDR II controllers operating at the same voltage."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/CY7C1911KV18-300BZXC","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/CY7C1911KV18-300BZXC when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}