{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"CY7C1613KV18-300BZI","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"CY7C1613KV18-300BZI","canonicalUrl":"https://icboms.com/infineon/CY7C1613KV18-300BZI","factsUrl":"https://icboms.com/api/mcp/products/CY7C1613KV18-300BZI","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CY7C1613KV18-300BZI, QDR II synchronous SRAM, 144Mbit, 8M x 18, 300 MHz clock, parallel interface, 1.7V–1.9V supply, -40°C to 85°C, 165-ball FBGA (15x17 mm), tray.","salesMarkdown":"## 300 MHz QDR II SRAM for high-throughput buffering The Infineon CY7C1613KV18-300BZI is a 144 Mbit QDR II synchronous SRAM organized as 8M x 18 bits, clocked at 300 MHz. The QDR II architecture delivers two data words per clock cycle on separate read and write ports, eliminating bus-turnaround dead cycles that standard synchronous SRAMs incur. Infineon lists the CY7C1613KV18-300BZI as Active. The 300 MHz speed grade is the fastest in the CY7C1613KV18 family, so if your design currently uses the 250 MHz variant, this part drops in at the same footprint and supply voltage with additional timing margin.","metaTitle":"Infineon CY7C1613KV18-300BZI QDR II SRAM, 144Mbit, 300 MHz","metaDescription":"Infineon CY7C1613KV18-300BZI 144Mbit QDR II synchronous SRAM, 300 MHz clock, 8M x 18 organization, 1.7V–1.9V supply, -40°C to 85°C, 165-FBGA.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Tray","Technology":"SRAM - Synchronous, QDR II","Memory Size":"144Mbit","Memory Type":"Volatile","Memory Format":"SRAM","Mounting Type":"Surface Mount","Package / Case":"165-LBGA","Product Status":"Active","Clock Frequency":"300 MHz","lifecycle_stage":"eol_hot","Memory Interface":"Parallel","Voltage - Supply":"1.7V ~ 1.9V","Base Product Number":"CY7C1613","Memory Organization":"8M x 18","Operating Temperature":"-40°C ~ 85°C (TA)","Supplier Device Package":"165-FBGA (15x17)","Write Cycle Time - Word, Page":"-"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/2c7c4b4b97c431e16926886b8fc71e31.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/CY7C1613KV18-300BZI/alternatives.json"},"ai":{"faq":[{"question":"Can I use CY7C1613KV18-300BZI as a replacement for CY7C1613KV18-250BZI?","answer":"Yes. The CY7C1613KV18-300BZI is the 300 MHz speed-grade variant of the same base product number CY7C1613. It shares the same 144 Mbit density, 8M x 18 organization, 1.7 V–1.9 V supply range, and 165-ball FBGA footprint as the 250 MHz version. The 300 MHz part offers higher clock frequency, so it is a drop-in replacement with additional timing margin for the same bus interface."},{"question":"Is CY7C1613KV18-300BZI a QDR II SRAM?","answer":"Yes. The device is a synchronous QDR II SRAM, which provides separate read and write data ports and double-data-rate operation on each port."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/CY7C1613KV18-300BZI","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/CY7C1613KV18-300BZI when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}