{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"CY7C1612KV18-250BZXI","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"CY7C1612KV18-250BZXI","canonicalUrl":"https://icboms.com/infineon/CY7C1612KV18-250BZXI","factsUrl":"https://icboms.com/api/mcp/products/CY7C1612KV18-250BZXI","rawCanonicalId":null},"summary":{"shortDescription":"Cypress CY7C1612KV18-250BZXI, QDR II synchronous SRAM, 144 Mbit (8M x 18), 250 MHz clock, parallel interface, 1.7V–1.9V supply, -40°C to 85°C, 165-FBGA (15x17 mm), Tray.","salesMarkdown":"## What this QDR II SRAM delivers at 250 MHz Its 250 MHz clock rate supports back-to-back read and write transactions on separate data ports without dead cycles, which is the defining advantage of the QDR II family over conventional synchronous SRAM. The parallel memory interface keeps latency low for applications that cannot tolerate the protocol overhead of serial memory. ## 250 MHz clock — what it buys the system At 250 MHz, the 18-bit-wide data bus operates at double data rate. The base product number CY7C1612 covers the full QDR II density and speed range, so if a future speed-grade or package variant is needed, the same footprint and interface apply. ## Design-in checklist for the 165-FBGA The 165-ball FBGA (15x17 mm) requires a multi-layer PCB with at least four signal layers to route the 18-bit data buses cleanly. Supply decoupling should follow the manufacturer's recommendation for 1.8 V SRAM: a 0.1 µF capacitor per power ball pair, placed within 2 mm of the ball.","metaTitle":"Cypress CY7C1612KV18-250BZXI QDR II SRAM, 144 Mbit, 250 MHz","metaDescription":"Cypress CY7C1612KV18-250BZXI QDR II synchronous SRAM, 144 Mbit organized 8M x 18, 250 MHz clock, 1.7V-1.9V supply, -40°C to 85°C, 165-FBGA. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Tray","Technology":"SRAM - Synchronous, QDR II","Memory Size":"144Mbit","Memory Type":"Volatile","Memory Format":"SRAM","Mounting Type":"Surface Mount","Package / Case":"165-LBGA","Product Status":"Active","Clock Frequency":"250 MHz","lifecycle_stage":"eol_hot","Memory Interface":"Parallel","Voltage - Supply":"1.7V ~ 1.9V","Base Product Number":"CY7C1612","Memory Organization":"8M x 18","Operating Temperature":"-40°C~85°C(TA)","Supplier Device Package":"165-FBGA (15x17)","Write Cycle Time - Word, Page":"-"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$307.6800","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/887d88dfd918fb0b22dd519b20ee4bb4.pdf","sourceUrl":null},"ai":{"faq":[{"question":"How does CY7C1612KV18-250BZXI compare to CY7C1612KV18-200BZXI?","answer":"The 250BZXI runs at 250 MHz versus 200 MHz for the 200BZXI, providing 25% higher peak bandwidth. Both share the same 144 Mbit density, 8M x 18 organization, package, and temperature range. The speed upgrade tightens PCB timing margins but does not change the footprint."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/CY7C1612KV18-250BZXI","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/CY7C1612KV18-250BZXI when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}