{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"CY7C1513KV18-300BZC","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"CY7C1513KV18-300BZC","canonicalUrl":"https://icboms.com/infineon/CY7C1513KV18-300BZC","factsUrl":"https://icboms.com/api/mcp/products/CY7C1513KV18-300BZC","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CY7C1513KV18-300BZC, QDR II synchronous SRAM, 72 Mbit (4M x 18), 300 MHz clock, 1.7 V–1.9 V supply, 165-FBGA (13x15), 0°C to 70°C commercial temperature.","salesMarkdown":"## What this QDR II SRAM does on the board The Infineon CY7C1513KV18-300BZC is a 72 Mbit synchronous QDR II SRAM organized as 4M x 18 bits, clocked at 300 MHz. The QDR II architecture delivers two data words per clock cycle on separate read and write ports, eliminating bus-turnaround dead cycles — critical for back-to-back throughput in high-bandwidth applications like network switches, test equipment, and baseband processing. ## 300 MHz clock — what it buys you At 300 MHz, the QDR II interface delivers two data words per clock cycle on separate read and write ports. This confines the part to indoor, temperature-controlled racks and benchtop gear. Marked end-of-life (EOL). The manufacturer no longer produces this part in volume.","metaTitle":"Infineon CY7C1513KV18-300BZC QDR II SRAM, 72 Mbit, 300 MHz","metaDescription":"Infineon CY7C1513KV18-300BZC synchronous QDR II SRAM, 72 Mbit (4M x 18), 300 MHz clock, 1.7-1.9 V supply, 165-FBGA, 0°C to 70°C. EOL; sourced to order against RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Tray","Technology":"SRAM - Synchronous, QDR II","Memory Size":"72Mbit","Memory Type":"Volatile","Memory Format":"SRAM","Mounting Type":"Surface Mount","Package / Case":"165-LBGA","Product Status":"Active","Clock Frequency":"300 MHz","lifecycle_stage":"eol_hot","Memory Interface":"Parallel","Voltage - Supply":"1.7V ~ 1.9V","Base Product Number":"CY7C1513","Memory Organization":"4M x 18","Operating Temperature":"0°C~70°C(TA)","Supplier Device Package":"165-FBGA (13x15)","Write Cycle Time - Word, Page":"-"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$180.1100","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/fecc7e54873197095792ce9e146235b1.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/CY7C1513KV18-300BZC/alternatives.json"},"ai":{"faq":[{"question":"What is the closest pin-compatible alternative to CY7C1513KV18-300BZC?","answer":"No official pin-compatible replacement is listed in the lifecycle record. For a currently-produced alternative, evaluate Infineon's QDR II+ or QDR IV SRAM family in the same 165-FBGA footprint, but verify controller timing and supply voltage compatibility before substituting."},{"question":"What is CY7C1513KV18-300BZC's listed package?","answer":"The part is supplied in a 165-ball FBGA (13x15 mm) on tray. The package is surface-mount with a 1.0 mm ball pitch."},{"question":"What technology does CY7C1513KV18-300BZC use?","answer":"It is a synchronous QDR II SRAM — a double-data-rate architecture with independent read and write ports that eliminates bus-turnaround dead cycles for high-throughput applications."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/CY7C1513KV18-300BZC","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/CY7C1513KV18-300BZC when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}