{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"CY7C1512AV18-250BZXI","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"CY7C1512AV18-250BZXI","canonicalUrl":"https://icboms.com/infineon/CY7C1512AV18-250BZXI","factsUrl":"https://icboms.com/api/mcp/products/CY7C1512AV18-250BZXI","rawCanonicalId":null},"summary":{"shortDescription":"Infineon (Cypress) CY7C1512AV18-250BZXI, QDR II synchronous SRAM, 72Mbit, 4M x 18 organization, 250 MHz clock, parallel interface, 1.7V–1.9V supply, -40°C to 85°C, 165-FBGA (15x17 mm), Tray.","salesMarkdown":"It clocks at 250 MHz on a parallel interface, delivering separate read and write ports that eliminate bus-turnaround dead cycles — a key advantage over standard synchronous SRAM for high-throughput applications. ## 250 MHz clock and QDR II bus — what the rating means for the design At 250 MHz the QDR II architecture delivers two data transfers per clock cycle on separate read and write ports, so the effective data rate per pin is 500 Mbps. For a 72 Mbit device organized 4M x 18, the aggregate bandwidth reaches 9 Gbps on the read port and 9 Gbps on the write port simultaneously. That sustained throughput matters when the SRAM sits between a high-speed ASIC or FPGA and a lookup table or buffer — the bus never stalls waiting for read/write direction changes.","metaTitle":"Infineon CY7C1512AV18-250BZXI QDR II SRAM, 72Mbit, 250 MHz","metaDescription":"CY7C1512AV18-250BZXI QDR II synchronous SRAM from Infineon (Cypress). 72Mbit, 4M x 18, 250 MHz clock, 1.7V–1.9V, -40°C to 85°C, 165-FBGA.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Tray","Technology":"SRAM - Synchronous, QDR II","Memory Size":"72Mbit","Memory Type":"Volatile","Memory Format":"SRAM","Mounting Type":"Surface Mount","Package / Case":"165-LBGA","Product Status":"Obsolete","Clock Frequency":"250 MHz","lifecycle_stage":"eol_hot","Memory Interface":"Parallel","Voltage - Supply":"1.7V ~ 1.9V","Base Product Number":"CY7C1512","Memory Organization":"4M x 18","Operating Temperature":"-40°C~85°C(TA)","Supplier Device Package":"165-FBGA (15x17)","Write Cycle Time - Word, Page":"-"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/f3286ca1d7df309768d0213b7784be49.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/CY7C1512AV18-250BZXI/alternatives.json"},"ai":{"faq":[{"question":"Is CY7C1512AV18-250BZXI obsolete?","answer":"Yes, the lifecycle status is Obsolete. Infineon (Cypress) no longer produces this part in active manufacturing, so procurement relies on the surplus and broker channel for verified stock."},{"question":"What is the replacement or equivalent for CY7C1512AV18-250BZXI?","answer":"A pin-compatible QDR II SRAM with the same 72 Mbit density, 4M x 18 organization, and 250 MHz clock in a 165-FBGA package would need to be validated against the specific ball map and timing parameters of this device."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/CY7C1512AV18-250BZXI","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/CY7C1512AV18-250BZXI when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}