{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"CY7C1426KV18-300BZXC","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"CY7C1426KV18-300BZXC","canonicalUrl":"https://icboms.com/infineon/CY7C1426KV18-300BZXC","factsUrl":"https://icboms.com/api/mcp/products/CY7C1426KV18-300BZXC","rawCanonicalId":null},"summary":{"shortDescription":"Infineon Technologies QDR II SRAM, 36Mbit (4M×9), 300 MHz parallel interface, 1.7–1.9V supply, 165-LBGA tray, 0°C–70°C.","salesMarkdown":"## 36Mbit QDR II at 300 MHz — the throughput ceiling The CY7C1426KV18-300BZXC is a 36Mbit QDR II synchronous SRAM organized as 4M x 9, clocked at 300 MHz via a parallel interface. This is a high-bandwidth part built for look-aside caches, packet buffers, and network processor memory where the bus must keep up with line-rate traffic. The 300 MHz clock means each read or write cycle completes in under 3.3 ns — the limiting factor in a high-throughput design is often the board trace delay, not the SRAM itself. ## Supply rail and temperature — the operating envelope The core supply is 1.7V to 1.9V, a tight window that demands a clean rail with ripple well below 50 mV peak-to-peak at the package pins. The 165-FBGA (13x15 mm) footprint places the decoupling caps close to the BGA balls — any inductance in the supply path eats into the timing margin at 300 MHz.","metaTitle":"CY7C1426KV18-300BZXC Infineon QDR II SRAM, 36Mbit, 300 MHz","metaDescription":"CY7C1426KV18-300BZXC Infineon QDR II SRAM, 36Mbit (4M×9), 300 MHz parallel interface, 1.7-1.9V, 165-LBGA tray. Last Buy — sourced to order against RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Last Buy","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"title":"CY7C1426KV18-300BZXC","Package":"Tray","Technology":"SRAM - Synchronous, QDR II","Memory Size":"36Mbit","Memory Type":"Volatile","Memory Format":"SRAM","Mounting Type":"Surface Mount","Package / Case":"165-LBGA","Clock Frequency":"300 MHz","lifecycle_stage":"eol_hot","Memory Interface":"Parallel","Voltage - Supply":"1.7V ~ 1.9V","Base Product Number":"CY7C1426","Memory Organization":"4M x 9","Operating Temperature":"0°C ~ 70°C (TA)","Supplier Device Package":"165-FBGA (13x15)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/476192c054907d86406ed1882873eda6.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the closest pin-compatible alternative to CY7C1426KV18-300BZXC?","answer":"No official pin-compatible successor is listed by Infineon. A parametric search for a QDR II SRAM in the same 165-FBGA (13x15 mm) package with a 1.7–1.9V supply and a 300 MHz clock is the practical approach for a replacement."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/CY7C1426KV18-300BZXC","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/CY7C1426KV18-300BZXC when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-21T02:09:06.997Z","lastPublished":"2026-07-21T02:09:06.997Z","indexable":true}}