{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"CY7C1418KV18-300BZXC","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"CY7C1418KV18-300BZXC","canonicalUrl":"https://icboms.com/infineon/CY7C1418KV18-300BZXC","factsUrl":"https://icboms.com/api/mcp/products/CY7C1418KV18-300BZXC","rawCanonicalId":null},"summary":{"shortDescription":"Infineon Technologies CY7C1418KV18-300BZXC synchronous DDR II SRAM, 36Mbit, 2M x 18 organization, 300 MHz clock, 1.7-1.9V supply, parallel interface, 165-LBGA (13x15mm) tray, 0°C to 70°C.","salesMarkdown":"## 300 MHz DDR II SRAM for high-throughput data paths The CY7C1418KV18-300BZXC is a 36Mbit synchronous DDR II SRAM organized as 2M x 18 bits, clocked at 300 MHz. It is the memory array for designs that need deterministic read-write latency on a wide parallel bus — typically a packet buffer, a look-up table, or a trace FIFO in networking, test, or industrial control equipment. DDR II means data is transferred on both clock edges, so the effective data rate at the I/O pins is 600 MT/s per pin. The 18-bit interface width gives a peak bandwidth of 10.8 Gbit/s into the FPGA or ASIC it feeds. Core supply is 1.7 V to 1.9 V — the 200 mV tolerance around the nominal 1.8 V rail means the on-board regulator must hold regulation within that band under load transients. ## 165-ball FBGA — layout and fan-out A 1.0 mm pitch is routable on a 4-layer board with 0.18 mm trace/space — the inner rows of balls need micro-vias or dog-bone fan-out to the inner layers. The supply balls are distributed around the periphery and the core; the decoupling capacitor placement should mirror the ball map to keep the loop inductance below 2 nH per supply pair.","metaTitle":"Infineon CY7C1418KV18-300BZXC 36Mbit DDR II SRAM, 300 MHz","metaDescription":"36Mbit synchronous DDR II SRAM, 2M x 18, 300 MHz clock, 1.7-1.9V, 165-LBGA (13x15mm), 0-70°C. Active production — quoted to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"title":"CY7C1418KV18-300BZXC","Package":"Tray","Technology":"SRAM - Synchronous, DDR II","Memory Size":"36Mbit","Memory Type":"Volatile","Memory Format":"SRAM","Mounting Type":"Surface Mount","Package / Case":"165-LBGA","Clock Frequency":"300 MHz","lifecycle_stage":"eol_hot","Memory Interface":"Parallel","Voltage - Supply":"1.7V ~ 1.9V","Base Product Number":"CY7C1418","Memory Organization":"2M x 18","Operating Temperature":"0°C ~ 70°C (TA)","Supplier Device Package":"165-FBGA (13x15)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/b42f33d8f23744bdfb7de7dd5cf481fd.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the memory organization and clock speed of CY7C1418KV18-300BZXC?","answer":"It is a 36Mbit synchronous DDR II SRAM organized 2M words x 18 bits, with a 300 MHz clock. Data transfers on both clock edges, giving an effective 600 MT/s per I/O pin."},{"question":"What package does CY7C1418KV18-300BZXC come in?","answer":"A 165-ball LBGA (13 x 15 mm FBGA) with 1.0 mm ball pitch, supplied in tray packaging."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/CY7C1418KV18-300BZXC","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/CY7C1418KV18-300BZXC when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}