{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"CY7C1418KV18-250BZXC","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"CY7C1418KV18-250BZXC","canonicalUrl":"https://icboms.com/infineon/CY7C1418KV18-250BZXC","factsUrl":"https://icboms.com/api/mcp/products/CY7C1418KV18-250BZXC","rawCanonicalId":null},"summary":{"shortDescription":"Cypress CY7C1418KV18-250BZXC, 36Mbit Synchronous DDR II SRAM, 2M x 18 organization, 250 MHz clock, 1.7V-1.9V supply, 165-FBGA (13x15), 0°C to 70°C.","salesMarkdown":"## DDR II SRAM for high-throughput data buffers It clocks at 250 MHz using a double-data-rate interface, meaning data transfers on both edges of the clock for an effective 500 MT/s bandwidth on an 18-bit bus. ## 250 MHz clock — timing margin in a DDR interface At 250 MHz the DDR II core delivers a 4 ns clock period, but the double-data-rate nature halves the data valid window to roughly 2 ns. The part's internal pipeline and output hold times are specified for that window, so the FPGA or ASIC controller needs to meet setup/hold at the SRAM pins without excessive PCB trace skew. If the design already runs a 250 MHz DDR controller, this part drops in; if the controller tops out at 200 MHz, a slower speed grade saves cost. The PCB layout should place a 0.1 µF ceramic cap within 2 mm of each VDD pin, plus a 10 µF bulk cap per quadrant of the 165-FBGA footprint. The 165-FBGA (13x15) package uses a 1.0 mm ball pitch — no via-in-pad required, but the escape routing needs at least two signal layers. If the system sees -40°C or +85°C, look at the industrial-temperature variants in the same Cypress DDR II family. For new designs this is a safe selection; for production builds the supply channel is stable through independent distribution.","metaTitle":"Cypress CY7C1418KV18-250BZXC 36Mbit DDR II SRAM, 250 MHz","metaDescription":"Cypress CY7C1418KV18-250BZXC 36Mbit synchronous DDR II SRAM, 2M x 18 organization, 250 MHz clock, 1.7V-1.9V supply, 165-FBGA. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Tray","Technology":"SRAM - Synchronous, DDR II","Memory Size":"36Mbit","Memory Type":"Volatile","Memory Format":"SRAM","Mounting Type":"Surface Mount","Package / Case":"165-LBGA","Product Status":"Active","Clock Frequency":"250 MHz","lifecycle_stage":"eol_hot","Memory Interface":"Parallel","Voltage - Supply":"1.7V ~ 1.9V","Base Product Number":"CY7C1418","Memory Organization":"2M x 18","Operating Temperature":"0°C~70°C(TA)","Supplier Device Package":"165-FBGA (13x15)","Write Cycle Time - Word, Page":"-"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$21.2200","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/b42f33d8f23744bdfb7de7dd5cf481fd.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/CY7C1418KV18-250BZXC/alternatives.json"},"ai":{"faq":[{"question":"What is the memory organization of CY7C1418KV18-250BZXC?","answer":"The memory is organized as 2M words by 18 bits (2M x 18), giving a total density of 36 Mbit."},{"question":"Is CY7C1418KV18-250BZXC RoHS compliant?","answer":"The part is lead-free and RoHS-compliant as indicated by the 'C' suffix in the order code (BZXC)."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/CY7C1418KV18-250BZXC","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/CY7C1418KV18-250BZXC when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}