{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"CY7C1354CV25-200AXC","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"CY7C1354CV25-200AXC","canonicalUrl":"https://icboms.com/infineon/CY7C1354CV25-200AXC","factsUrl":"https://icboms.com/api/mcp/products/CY7C1354CV25-200AXC","rawCanonicalId":null},"summary":{"shortDescription":"Infineon Technologies NoBL™ SRAM, synchronous SDR, 9Mbit, 256K x 36, 200 MHz clock, 3.2 ns access, 2.375V-2.625V, 0-70°C, 100-TQFP, tray.","salesMarkdown":"## Why the 200 MHz clock and 3.2 ns access define this SRAM's fit The CY7C1354CV25-200AXC is a 9Mbit synchronous SRAM from Infineon's NoBL (No Bus Latency) family, organized 256K x 36 and clocked at 200 MHz with a 3.2 ns access time. This combination means the part can sustain back-to-back read and write operations without dead cycles on the bus — the NoBL pipeline eliminates the turnaround cycle that standard synchronous SRAMs insert between a read and a write. For a system architect evaluating memory bandwidth against a 36-bit data bus, the 200 MHz clock yields a theoretical peak of 800 MB/s (200 MHz × 4 bytes per cycle), though the actual throughput depends on the controller's ability to keep the pipeline full. The 3.2 ns access time is the time from clock edge to data-out valid — it sets the hold margin on the receiving FPGA or ASIC. ## Supply rails and temperature — the operating envelope The core supply is 2.375 V to 2.625 V (2.5 V nominal with 5 % margin). This narrow range means the board-level regulator must hold regulation within ±62.5 mV under load transients — a standard 2.5 V LDO with 1 % accuracy and 50 mV dropout meets the requirement, but a switching regulator needs tight output tolerance or a post-filter. For industrial or automotive applications requiring extended temperature, a different suffix in the CY7C1354 family would be needed. ## Package footprint and PCB layout considerations The 0.5 mm pitch requires controlled impedance traces for the 36-bit data bus at 200 MHz — typical microstrip or stripline with 50 Ω single-ended or 100 Ω differential for the clock pair, with length matching across the byte lanes to keep skew within the 3.2 ns access window. Decoupling should follow the manufacturer's recommendation: one 0.1 µF ceramic per VDDQ pin pair, plus a 10 µF bulk capacitor near the supply entry. Infineon lists the CY7C1354CV25-200AXC as Active. That means the manufacturer continues to support new orders through its authorized channel. For volume BOM positions, the part can be specified into the material plan with confidence that the factory pipeline is open.","metaTitle":"Infineon CY7C1354CV25-200AXC NoBL SRAM, 9Mbit, 200 MHz","metaDescription":"Active Infineon CY7C1354CV25-200AXC synchronous SRAM, 9Mbit (256K x 36), 200 MHz clock, 3.2 ns access, 100-TQFP. Available to order against RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"Mfr":"Infineon Technologies","Series":"NoBL™","Package":"Tray","Technology":"SRAM - Synchronous, SDR","Access Time":"3.2 ns","Memory Size":"9Mbit","Memory Type":"Volatile","Memory Format":"SRAM","Mounting Type":"Surface Mount","Package / Case":"100-LQFP","Product Status":"Active","Clock Frequency":"200 MHz","lifecycle_stage":"eol_hot","Memory Interface":"Parallel","Voltage - Supply":"2.375V ~ 2.625V","Base Product Number":"CY7C1354","Memory Organization":"256K x 36","Operating Temperature":"0°C~70°C(TA)","Supplier Device Package":"100-TQFP (14x20)","Write Cycle Time - Word, Page":"-"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$16.1525","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/a7ef9613cd534ef644419074685578e6.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/CY7C1354CV25-200AXC/alternatives.json"},"ai":{"faq":[{"question":"How can I order the CY7C1354CV25-200AXC or check availability?","answer":"Submit an RFQ through the storefront. No stock-holding claim is made here — each request is quoted individually against the BOM quantity."},{"question":"What memory organization and density does the CY7C1354CV25-200AXC provide?","answer":"It is a 9Mbit synchronous SRAM organized as 256K words × 36 bits. The 36-bit data bus is suited for processor or DSP systems that need a parity or ECC byte alongside a 32-bit word, or for wide memory banks in networking equipment."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/CY7C1354CV25-200AXC","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/CY7C1354CV25-200AXC when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}