{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"CY7C1318JV18-300BZXC","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"CY7C1318JV18-300BZXC","canonicalUrl":"https://icboms.com/infineon/CY7C1318JV18-300BZXC","factsUrl":"https://icboms.com/api/mcp/products/CY7C1318JV18-300BZXC","rawCanonicalId":null},"summary":{"shortDescription":"Cypress CY7C1318JV18-300BZXC, DDR II+ Synchronous SRAM, 18Mbit (1M x 18), 300 MHz clock, Parallel interface, 1.7V–1.9V supply, 165-FBGA (13x15), 0°C to 70°C.","salesMarkdown":"The 300 MHz clock rate means the data bus toggles on both edges, delivering an effective 600 MT/s per pin. For a networking packet buffer or a high-speed compute FIFO, that translates to a 1.8 GB/s peak bandwidth over the 18-bit data bus. The 1.7V to 1.9V core supply keeps I/O levels compatible with 1.8V logic families common in FPGA and ASIC designs. ## 165-ball BGA — layout considerations The part comes in a 165-ball FBGA (13x15 mm) package. That is a fine-pitch BGA — expect 0.8 mm or 1.0 mm ball pitch depending on the specific ball map. The footprint requires controlled-impedance traces for the DDR data lines and adequate decoupling capacitance (typically 0.1 µF per supply pin plus bulk cap) within 5 mm of the package.","metaTitle":"CY7C1318JV18-300BZXC SRAM, 18Mbit DDR II, 300 MHz, Obsolete","metaDescription":"Cypress CY7C1318JV18-300BZXC 18Mbit DDR II+ SRAM, 300 MHz clock, 1M x 18 organization, 165-FBGA, 0°C to 70°C.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Tray","Technology":"SRAM - Synchronous, DDR II","Memory Size":"18Mbit","Memory Type":"Volatile","Memory Format":"SRAM","Mounting Type":"Surface Mount","Package / Case":"165-LBGA","Product Status":"Obsolete","Clock Frequency":"300 MHz","lifecycle_stage":"eol_hot","Memory Interface":"Parallel","Voltage - Supply":"1.7V ~ 1.9V","Base Product Number":"CY7C1318","Memory Organization":"1M x 18","Operating Temperature":"0°C~70°C(TA)","Supplier Device Package":"165-FBGA (13x15)","Write Cycle Time - Word, Page":"-"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$35.6700","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/5ff6e0e4f88260dcf27b234bb2dbaaea.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/CY7C1318JV18-300BZXC/alternatives.json"},"ai":{"faq":[{"question":"What is the replacement for CY7C1318JV18-300BZXC?","answer":"For a pin-compatible alternative, check the same Cypress DDR II+ SRAM family at a lower speed grade (e.g., 200 MHz variant) or consider a different density if the 18Mbit organization is not critical. We can help identify a cross when you submit an RFQ."},{"question":"What voltage does CY7C1318JV18-300BZXC use?","answer":"The supply voltage range is 1.7V to 1.9V, typically 1.8V. The I/O interface is also 1.8V-compatible."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/CY7C1318JV18-300BZXC","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/CY7C1318JV18-300BZXC when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}