{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"CY7C1318BV18-200BZI","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"CY7C1318BV18-200BZI","canonicalUrl":"https://icboms.com/infineon/CY7C1318BV18-200BZI","factsUrl":"https://icboms.com/api/mcp/products/CY7C1318BV18-200BZI","rawCanonicalId":null},"summary":{"shortDescription":"Infineon (Cypress) CY7C1318BV18-200BZI, 18Mbit Synchronous DDR II SRAM, 1M x 18 organization, 200 MHz clock frequency, Parallel interface, 1.7V-1.9V supply, -40°C to 85°C, 165-LBGA (13x15 FBGA), Tray.","salesMarkdown":"## DDR II+ SRAM — 18 Mbit, 200 MHz, 1.7 V–1.9 V core The CY7C1318BV18-200BZI is a 18 Mbit synchronous DDR II+ SRAM from Infineon (formerly Cypress Semiconductor), organized as 1 M x 18. This is a volatile SRAM in the DDR II family, designed for high-bandwidth buffering and cache applications in networking, telecom, and industrial systems where read/write throughput is critical. ## 200 MHz clock — bus timing and throughput The 200 MHz clock frequency defines the maximum data rate on the DDR II bus. Because it is a double-data-rate architecture, data is transferred on both rising and falling edges, effectively doubling the throughput per clock cycle relative to a single-data-rate SRAM at the same frequency. This matters for designs that need sustained read/write bandwidth — for example, a packet buffer in a line card or a cache in a baseband processor — where the memory bus is the bottleneck. ## Package and assembly — 165-ball FBGA The 165-ball LBGA (13x15 mm FBGA) is a fine-pitch BGA. Reflow profile must follow the manufacturer's recommendations for the solder-ball alloy. BGA rework requires X-ray inspection for voiding and alignment; the 13x15 mm footprint is manageable with a standard rework station.","metaTitle":"CY7C1318BV18-200BZI SRAM, 18Mbit DDR II, 200 MHz, Obsolete","metaDescription":"Infineon (Cypress) CY7C1318BV18-200BZI 18Mbit DDR II+ SRAM, 200 MHz clock, 1.7V-1.9V, -40°C to 85°C, 165-FBGA.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Tray","Technology":"SRAM - Synchronous, DDR II","Memory Size":"18Mbit","Memory Type":"Volatile","Memory Format":"SRAM","Mounting Type":"Surface Mount","Package / Case":"165-LBGA","Product Status":"Obsolete","Clock Frequency":"200 MHz","lifecycle_stage":"eol_hot","Memory Interface":"Parallel","Voltage - Supply":"1.7V ~ 1.9V","Base Product Number":"CY7C1318","Memory Organization":"1M x 18","Operating Temperature":"-40°C ~ 85°C (TA)","Supplier Device Package":"165-FBGA (13x15)","Write Cycle Time - Word, Page":"-"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/9d6bd9db70b359c0b11566a59b553eda.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the maximum clock frequency of CY7C1318BV18-200BZI?","answer":"The maximum clock frequency is 200 MHz. The DDR II architecture transfers data on both clock edges, so the effective data rate is 400 MT/s per pin."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/CY7C1318BV18-200BZI","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/CY7C1318BV18-200BZI when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}