{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"CY7C1170KV18-550BZC","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"CY7C1170KV18-550BZC","canonicalUrl":"https://icboms.com/infineon/CY7C1170KV18-550BZC","factsUrl":"https://icboms.com/api/mcp/products/CY7C1170KV18-550BZC","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CY7C1170KV18-550BZC, 18Mbit Synchronous SRAM, DDR II+, 550 MHz, 512K x 36, Parallel, 1.7V-1.9V, 165-FBGA (13x15 mm), 0°C to 70°C.","salesMarkdown":"The Infineon CY7C1170KV18-550BZC is a 18 Mbit synchronous SRAM organised as 512K x 36, using DDR II+ (Double Data Rate II+) architecture. It runs at a 550 MHz clock, delivering back-to-back read/write throughput without dead cycles on a 36-bit parallel bus. The 1.7 V to 1.9 V supply and 165-ball FBGA package (13x15 mm) target high-bandwidth networking, telecom line cards, and DSP memory subsystems where wide-word access and low-latency matter. At 550 MHz the DDR II+ interface transfers data on both clock edges. The 512K x 36 organisation moves 36 bits in parallel per access. ## Package and temperature — board-level constraints Storage temperature exceeds the operating range, but the part is not rated for condensation or extended thermal cycling outside the commercial window.","metaTitle":"Infineon CY7C1170KV18-550BZC SRAM, 18Mbit, 550 MHz, DDR II+","metaDescription":"Infineon CY7C1170KV18-550BZC 18Mbit synchronous SRAM, DDR II+, 550 MHz, 512K x 36, 1.7-1.9V, 165-FBGA. EOL — sourced to order against RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Tray","Technology":"SRAM - Synchronous, DDR II+","Memory Size":"18Mbit","Memory Type":"Volatile","Memory Format":"SRAM","Mounting Type":"Surface Mount","Package / Case":"165-LBGA","Product Status":"Active","Clock Frequency":"550 MHz","lifecycle_stage":"eol_hot","Memory Interface":"Parallel","Voltage - Supply":"1.7V ~ 1.9V","Base Product Number":"CY7C1170","Memory Organization":"512K x 36","Operating Temperature":"0°C ~ 70°C (TA)","Supplier Device Package":"165-FBGA (13x15)","Write Cycle Time - Word, Page":"-"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$56.9000","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/41700fbc2e9665f5f5b934d93f510921.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/CY7C1170KV18-550BZC/alternatives.json"},"ai":{"faq":[{"question":"What is the package type for CY7C1170KV18-550BZC?","answer":"It comes in a 165-ball FBGA (13x15 mm) package, supplied in tray format."},{"question":"What is the memory technology of CY7C1170KV18-550BZC?","answer":"It is a volatile synchronous SRAM using DDR II+ (Double Data Rate II+) architecture with a parallel interface."},{"question":"Will CY7C1170KV18-550BZC drop into a board designed for CY7C1265XV18-633BZXC?","answer":"Both parts share a 165-ball FBGA footprint and a 1.7 V to 1.9 V supply, but the CY7C1265XV18-633BZXC has a different ball map and a 633 MHz clock. Verify the PCB layout and timing constraints before substitution."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/CY7C1170KV18-550BZC","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/CY7C1170KV18-550BZC when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}