{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"CY7C1168KV18-550BZXC","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"CY7C1168KV18-550BZXC","canonicalUrl":"https://icboms.com/infineon/CY7C1168KV18-550BZXC","factsUrl":"https://icboms.com/api/mcp/products/CY7C1168KV18-550BZXC","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CY7C1168KV18-550BZXC, 18Mbit DDR II+ synchronous SRAM, 550MHz clock, 1Mx18 organization, 1.7V-1.9V supply, 165-LBGA tray, commercial 0°C-70°C.","salesMarkdown":"## What this 18Mbit DDR II+ SRAM does in the system The Infineon CY7C1168KV18-550BZXC is a 18Mbit synchronous SRAM using DDR II+ architecture, organized as 1M x 18 bits and clocked at 550 MHz. It sits in the high-speed data path — think network switch buffers, test equipment capture memory, or any design that needs back-to-back read/write throughput without dead cycles. The DDR II+ interface doubles the data rate on each clock edge, so the controller sees 1.1 G transfers per second on the data bus. Supply runs from 1.7V to 1.9V, which means a clean 1.8V rail is expected — no mixing with 3.3V or 2.5V I/O domains without level translation. At 550 MHz, this part is built for the fast lane. The DDR II+ architecture means data transfers on both rising and falling clock edges, so the effective data rate is 1.1 G transfers per second per pin. For a 36-bit or 72-bit memory bus, that adds up fast. The trade-off: timing closure on the PCB gets tighter — trace length matching and signal integrity matter more than with slower synchronous SRAM. If your FPGA or ASIC memory controller doesn't support DDR II+ at this speed, the part won't run at its rated clock. Check the controller's I/O timing budget before committing the BOM line. ## Package and board integration — 165-FBGA The 165-FBGA (13x15 mm) is a fine-pitch BGA. No lab, no bench — you need a reflow oven and X-ray inspection to verify solder joints. The 1.7V to 1.9V core supply means dedicated power plane or a local LDO feeding the VDD pins. Decoupling should follow the layout guidelines in the datasheet; at 550 MHz, the transient current draw is fast enough that a few nH of via inductance can cause supply droop. For production planning, that means it's still a supported, manufacturable part — no last-time-buy crunch to navigate.","metaTitle":"Infineon CY7C1168KV18-550BZXC 18Mbit DDR II+ SRAM, 550 MHz","metaDescription":"Infineon CY7C1168KV18-550BZXC 18Mbit DDR II+ synchronous SRAM, 550MHz clock, 1Mx18 organization, 1.7V-1.9V supply, 165-LBGA tray, 0°C-70°C. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Tray","Technology":"SRAM - Synchronous, DDR II+","Memory Size":"18Mbit","Memory Type":"Volatile","Memory Format":"SRAM","Mounting Type":"Surface Mount","Package / Case":"165-LBGA","Product Status":"Active","Clock Frequency":"550 MHz","lifecycle_stage":"eol_hot","Memory Interface":"Parallel","Voltage - Supply":"1.7V ~ 1.9V","Base Product Number":"CY7C1168","Memory Organization":"1M x 18","Operating Temperature":"0°C~70°C(TA)","Supplier Device Package":"165-FBGA (13x15)","Write Cycle Time - Word, Page":"-"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$75.8275","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/41700fbc2e9665f5f5b934d93f510921.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/CY7C1168KV18-550BZXC/alternatives.json"},"ai":{"faq":[{"question":"Does CY7C1168KV18-550BZXC operate at 1.8V?","answer":"Yes. The supply voltage range is 1.7V to 1.9V, which centers on a standard 1.8V rail. The I/O interface also operates at this voltage — no 3.3V or 2.5V tolerance on the data pins."},{"question":"What is the difference between DDR II+ and standard DDR II SRAM?","answer":"DDR II+ is an enhanced version of the DDR II interface that supports higher clock frequencies and improved timing margins. The CY7C1168KV18 runs at 550 MHz, which is beyond the typical ceiling of standard DDR II SRAM parts. The controller must support DDR II+ protocol specifically — they are not drop-in compatible at the bus protocol level."},{"question":"Where can I download the datasheet for CY7C1168KV18-550BZXC?","answer":"The datasheet is available from Infineon's website under the base product number CY7C1168. It covers the full KV18 family including the 550 MHz speed grade and the 165-FBGA package variant."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/CY7C1168KV18-550BZXC","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/CY7C1168KV18-550BZXC when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}