{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"CY7C11681KV18-400BZC","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"CY7C11681KV18-400BZC","canonicalUrl":"https://icboms.com/infineon/CY7C11681KV18-400BZC","factsUrl":"https://icboms.com/api/mcp/products/CY7C11681KV18-400BZC","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CY7C11681KV18-400BZC, SRAM - Synchronous DDR II+, 18Mbit, 1M x 18, 400 MHz, Parallel, 1.7V-1.9V, 165-FBGA (13x15), 0°C to 70°C.","salesMarkdown":"The Infineon CY7C11681KV18-400BZC is an 18Mbit synchronous SRAM using DDR II+ architecture, organized as 1M x 18 and clocked at 400 MHz. The supply range of 1.7V to 1.9V means this part runs from a nominal 1.8V rail. ## 165-FBGA (13x15) — footprint and rework notes The 1.0 mm ball pitch is standard for this density, but the 13x15 mm body is larger than a typical 11x9 mm 165-ball — plan the keep-out zone accordingly. No lead-free finish is specified, so assume SnPb or matte tin — confirm with the date code if RoHS compliance is required.","metaTitle":"CY7C11681KV18-400BZC SRAM, 18Mbit DDR II+, 400 MHz, 165-FBGA","metaDescription":"Infineon CY7C11681KV18-400BZC 18Mbit synchronous SRAM, DDR II+, 400 MHz clock, 1M x 18 organization, 1.7V-1.9V supply, 165-FBGA.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Tray","Technology":"SRAM - Synchronous, DDR II+","Memory Size":"18Mbit","Memory Type":"Volatile","Memory Format":"SRAM","Mounting Type":"Surface Mount","Package / Case":"165-LBGA","Product Status":"Obsolete","Clock Frequency":"400 MHz","lifecycle_stage":"eol_hot","Memory Interface":"Parallel","Voltage - Supply":"1.7V ~ 1.9V","Base Product Number":"CY7C11681","Memory Organization":"1M x 18","Operating Temperature":"0°C ~ 70°C (TA)","Supplier Device Package":"165-FBGA (13x15)","Write Cycle Time - Word, Page":"-"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/9f72e4c3c5cca2a832a17cdd538a878f.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/CY7C11681KV18-400BZC/alternatives.json"},"ai":{"faq":[{"question":"What is the replacement for CY7C11681KV18-400BZC?","answer":"No official replacement part number is documented by Infineon. For a new design, look for a current-production DDR II+ synchronous SRAM with 1M x 18 organization, 400 MHz clock, and 165-FBGA (13x15) footprint. The 1.7V to 1.9V supply rail narrows the field — most modern SRAMs in this density run at 1.5V or 1.8V nominal."},{"question":"What is the difference between CY7C11681KV18-400BZC and CY7C11681KV18-400BZCT?","answer":"The suffix 'T' typically denotes Tape & Reel packaging instead of Tray. The silicon, speed grade, and footprint are identical. If your pick-and-place line is set up for reels, order the 'T' variant; for hand assembly or low-volume prototypes, the Tray version is fine."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/CY7C11681KV18-400BZC","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/CY7C11681KV18-400BZC when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}