{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"CY7C1163KV18-550BZC","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"CY7C1163KV18-550BZC","canonicalUrl":"https://icboms.com/infineon/CY7C1163KV18-550BZC","factsUrl":"https://icboms.com/api/mcp/products/CY7C1163KV18-550BZC","rawCanonicalId":null},"summary":{"shortDescription":"Infineon Technologies QDR II+ synchronous SRAM, CY7C1163KV18-550BZC, 18Mbit (1M x 18), 550 MHz clock, 1.7-1.9V supply, 165-FBGA, tray.","salesMarkdown":"## QDR II+ SRAM at 550 MHz — what the clock rate means for the memory bus The CY7C1163KV18-550BZC is a 18 Mbit QDR II+ synchronous SRAM from Infineon, organized as 1M x 18. The 550 MHz clock rate means the memory delivers a read and a write data transfer on every clock edge — effectively two transactions per cycle — so the peak data rate into the controller is 1.1 G transfers per second on the 18-bit bus. ## Package and board-fit for the layout engineer The supply operates from 1.7 V to 1.9 V, so the core rail must be regulated to within that window — a 1.8 V nominal rail with ±5 % tolerance fits cleanly. ## Active lifecycle — sourcing posture for the BOM Infineon lists this part as Active (current production).","metaTitle":"Infineon CY7C1163KV18-550BZC QDR II+ SRAM, 18Mbit, 550 MHz","metaDescription":"Infineon CY7C1163KV18-550BZC QDR II+ synchronous SRAM, 18Mbit (1M x 18), 550 MHz clock, 1.7-1.9V, 165-FBGA. Active production, sourced per RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Tray","Technology":"SRAM - Synchronous, QDR II+","Memory Size":"18Mbit","Memory Type":"Volatile","Memory Format":"SRAM","Mounting Type":"Surface Mount","Package / Case":"165-LBGA","Product Status":"Active","Clock Frequency":"550 MHz","lifecycle_stage":"eol_hot","Memory Interface":"Parallel","Voltage - Supply":"1.7V ~ 1.9V","Base Product Number":"CY7C1163","Memory Organization":"1M x 18","Operating Temperature":"0°C ~ 70°C (TA)","Supplier Device Package":"165-FBGA (13x15)","Write Cycle Time - Word, Page":"-"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$51.7588","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/5666c81a925ed0bb3e38e92f8b809a1d.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/CY7C1163KV18-550BZC/alternatives.json"},"ai":{"faq":[{"question":"What is the memory technology and interface of CY7C1163KV18-550BZC?","answer":"It is a synchronous SRAM using the QDR II+ architecture with a parallel memory interface. The 18 Mbit density is organized as 1M words by 18 bits."},{"question":"What package does CY7C1163KV18-550BZC use?","answer":"The supplier device package is 165-FBGA."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/CY7C1163KV18-550BZC","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/CY7C1163KV18-550BZC when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}